IS25WP128-RHLE Allicdata Electronics
Allicdata Part #:

706-1651-ND

Manufacturer Part#:

IS25WP128-RHLE

Price: $ 2.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 128M SPI 24TFBGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I...
DataSheet: IS25WP128-RHLE datasheetIS25WP128-RHLE Datasheet/PDF
Quantity: 413
1 +: $ 2.12310
10 +: $ 1.90827
25 +: $ 1.87816
50 +: $ 1.87312
100 +: $ 1.67372
480 +: $ 1.61935
960 +: $ 1.55389
1440 +: $ 1.50253
Stock 413Can Ship Immediately
$ 2.34
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IS25WP128-RHLE is a memory chip manufactured by ISSI to provide high-performance mask ROM memory for embedded applications. It is one of the many chips available for embedded storage applications and is commonly used in industrial and other high-volume applications which require reliable, secure data storage.

IS25WP128-RHLE offers many advantages over other memory solutions. It is one of the few chips available that offers a combination of high-speed operation and low-power consumption, making it suitable for a range of low-power embedded applications. It also features a wide operating temperature range and is extremely reliable, making it ideal for industrial applications where data integrity is of paramount importance.

The IS25WP128-RHLE offers 128 kbytes of flash memory. It is designed with a non-volatile, electrically erasable and programmable memory (EEPROM) cell and a Static Random Access Memory (SRAM) cell, allowing for fast read and write times of up to 25MHz. The chip also features an advanced security architecture for secure operation. It is able to provide up to 8-bit multiplexed read/write access, with ECC on read access and data integrity checking. Data integrity is maintained even through power cycles.

The IS25WP128-RHLE is a versatile solution for embedded storage applications. It is suitable for industrial automation, automotive, military, aerospace and communications applications. It can also be used for secure storage applications such as banking, retail, government and mobile applications.

The principle of operation of IS25WP128-RHLE is based on a non-volatile memory cell. The cell is composed of a number of transistors, capacitors and resistors arranged in a grid-like format. The cell is connected to a row line, a word line and two select lines known as source and drain lines. When the word line is energized, electrons from the source and drain lines are injected into the cell, allowing for the data to be stored. When the word line is deenergized, the cell\'s contents are retained and can be read out again for data recovery.

The IS25WP128-RHLE chip is a low-cost, high-performance solution for embedded storage applications. It offers reliable, secure data storage with a wide range of features and is suitable for a variety of industrial applications. Its non-volatile memory cell allows for fast read and write times and its advanced security architecture provides superior data integrity. With its wide temperature range and advanced features, this chip is sure to meet the requirements of any embedded storage application.

The specific data is subject to PDF, and the above content is for reference

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