IS42S16100C1-5TL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	16Mb (1M x 16)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	--
Access Time:	5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	50-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	50-TSOP II

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Memory plays a vital role in today\'s electronic computing devices, and the IS42S16100C1-5TL-TR is no exception. It acts as a storage device for digital information, and is used in computers, phones, tablets, and many other devices. The IS42S16100C1-5TL-TR is an asynchronous DRAM (Dynamic Random Access Memory) device, manufactured by ISSI. It is a 1 megabit memory chip with a compound of 16M x 8 bits Configuration. It is available in a 5-volt only commercial-industrial version (industrial grade up to 125°C).The primary application of the IS42S16100C1-5TL-TR is in the automotive and industrial sphere, where it proves to be advantageous in a variety of applications. It provides fast random access to data stored in its memory cells, which makes it suitable for use in embedded systems for a variety of purposes. These may include industrial process control, medical imaging and monitoring, automotive engine control, avionics, and many more.When it comes to the working principle of the IS42S16100C1-5TL-TR, it utilizes the concept of Dynamic Random Access Memory (DRAM) to store and access data. This type of memory consists of many memory cells, where each cell is built up of a capacitor and transistor, and is connected to an address line and a data line. In a DRAM, the data stored in a memory cell is kept in a charged or discharged state, which is determined by the presence or absence of charge on the cell\'s capacitor. To fetch data from the memory cell, a refresh operation is carried out first to re-establish the stored data charge. Then, a row address strobe (RAS) is referenced which will select a row of the DRAM for reading. Finally, a column address strobe (CAS) is used to select a memory cell from the current row. During a write operation, the data is written to the specified cell when the CAS line is referenced.The IS42S16100C1-5TL-TR is intended for systems where low power consumption is an important consideration. This is due to its low power read/write operations. It is also noted for its speed, with access times as low as 15 nanoseconds. It outperforms other memory chips with similar specifications, thanks to its advanced architecture.The IS42S16100C1-5TL-TR is packaged in a variety of form factors, such as SOJ (Small Outline J-Lead), TSOP I/II (Thin Small Outline Package) and further facilitates usage with these packages having a pinout of 42, 40 and 36 connections. Furthermore, it can be operated with a single 5V power source, eliminating the need for additional components and simplifying the design process.Overall, the IS42S16100C1-5TL-TR is the perfect memory solution for a variety of applications, thanks to its combination of advanced architecture, high speed and low power consumption. With its wide application range, it can be used for automotive and industrial systems, medical imaging and monitoring, and avionics. Its form factor and pinout also make it very convenient to work with, and it can be plugged into a system with a single 5V power source. The IS42S16100C1-5TL-TR is set to be the go-to solution for the modern-day user.

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