IS42S32800D-75EBLI-TR

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IS42S32800D-75EBLI-TR is a type of synchronous dynamic random access memory (SDRAM). It is classified under the memory family of devices. This type of memory device is designed primarily for use in system main memories and devices that require high voltage levels such as in embedded applications. This devices can also be configured to provide optimized power consumption, high reliability, and improved performance.

The IS42S32800D-75EBLI-TR typically has a frequency range between 50MHz and 133MHz. It has a typical access time of 7.5ns at the 133MHz frequency. The device has a built-in self-refresh cycle and a programmable output driver strength to minimize power consumption. Additionally, the device also features an on-chip power-up sequence and a programmable initialization time delay. This device also includes three banks selection control pins, which facilitates multi-bank operation and provides flexibility for instance for multi-port memories.

Typically, the IS42S32800D-75EBLI-TR has a 5V supply voltage, with a maximum current of 2.5mA on the core and 3.2mA on the I/O. The device also has a 4 address line configuration, and a total of 32 address lines available. It also has a 16 bit data bus, and a data width of 16 or 8-bits providing redundancy. The device is also equipped with two chip select pins to enable multiple memory accesses.

The main application of the IS42S32800D-75EBLI-TR is in system main memory and embedded applications. It provides an optimal mix of power and performance for embedded systems requiring high memory density and improved performance. The device is also compatible with most of the popular system buses, such as the SG-DIMM, JEDEC and VESA buses. The device can be used in a wide range of embedded applications including graphics, audio, video and networking.

The working principle of the IS42S32800D-75EBLI-TR is the same as any other type of SDRAM. It works by using an array of capacitors to store data. The capacitors are charged up with a voltage that represents the data, and then when the data needs to be read, the capacitors discharge to create a corresponding current that can be read from the device. The data can then be read from the memory device, manipulated and stored back in the memory device. When the data is written to the device, it is done by changing the voltage on the capacitors which causes them to discharge or become charged up with the new data.

The IS42S32800D-75EBLI-TR is a reliable, high-performance memory device that is suited for a range of embedded and system applications. It offers an optimal mix of price, power and performance, making it an ideal choice for a wide range of applications. With its built-in features like self-refresh cycles and programmable output driver strength, it provides enhanced performance and improved reliability. Additionally, the device is also compatible with popular system buses and offers flexibility for multi-port memories.

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