IS42S16400F-7BLI

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The IS42S16400F-7BLI is a type of synchronous DRAM memory chip from the ISSI family. It is specifically engineered for the purpose of matching current system requirements for high-performance, cost-effective and reliable interface design. This type of memory chip is made of the highest quality components for enhanced longevity and durability, making it ideal for a wide range of applications.

The IS42S16400F-7BLI has a very wide range of usage including consumer products, personal computers and server applications. It is based on a 1.8v synchronous DRAM technology which offers superior performance and lower power operation. The part is designed to provide an optimal balance between memory capacity and speed. The chip is composed of sixteen 4Mbit DDR2x8 banks, allowing for a total memory capacity of 64Mbit.

The working principle of the IS42S16400F-7BLI is based on synchronous DRAM technology. This means that data is transferred in parallel, instead of the traditional serial read and write operations. The chip is designed to operate over a frequency range of 66MHz to 200MHz, providing increased system efficiency and optimizing bandwidth. This allows for faster performance with lower power consumption.

The IS42S16400F-7BLI also offers enhanced reliability, a smaller footprint and low power operation. The chip is able to operate at an operating temperature range of 0° C - 85° C, and ambient temperatures of up to 85° C. The chip is designed to operate over a wide range of supply voltages, including 2.6V, 2.5V, 1.8V and 1.5V. It also incorporates an extensive power management system offering power savings and improved performance.

In short, the IS42S16400F-7BLI is an ideal choice for high-performance, low-power and cost-effective memory designs with enhanced reliability. With its wide range of features and robust design, this type of memory chip is well-suited for a variety of applications, including consumer electronics, personal computers and server applications. It is an excellent choice for creating reliable and high-performing memory designs.

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