IS42S16100C1-7B-TR Allicdata Electronics
Allicdata Part #:

IS42S16100C1-7B-TR-ND

Manufacturer Part#:

IS42S16100C1-7B-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 60TFBGA
More Detail: SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.5...
DataSheet: IS42S16100C1-7B-TR datasheetIS42S16100C1-7B-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)
Description

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IS42S16100C1-7B-TR is a memory device in the SDRAM family. It is a very versatile device, capable of performing a variety of functions ranging from address decoding to data storage. It is a double-data rate synchronous DRAM, commonly used in many embedded systems as well as applications that require a high degree of reliability and data throughput. This article will discuss the application field and working principle of IS42S16100C1-7B-TR.

Application field
IS42S16100C1-7B-TR is commonly used in a variety of applications such as in embedded systems, computer servers, and embedded communication systems. It is ideal for applications that require a high degree of reliability, such as telecommunications systems and automotive control systems. Additionally, the device is used in data-intensive applications such as web services, artificial intelligence, and video conferencing. The device is also suitable for use in multi-processor systems, as it allows for multiple processors to access the same memory device.

Working Principle
IS42S16100C1-7B-TR is a double-data rate synchronous DRAM. This means that it operates at twice the speed of a normal SDRAM by transferring data both on the rising and falling edges of the clock signal. This allows for faster access times and greater data throughput. The device uses a well-established four-step sequence to access the memory. This sequence is known as the Read Cycle and is used to read data from the device. The sequence is as follows:1. Precharge - A signal is sent to the memory device to close down the active row and put the memory into an idle state.2. Activate - A signal is sent to the device to activate the row that contains the desired data. 3. Read/Write Data - The data is then read or written to the memory location.4. Refresh - The memory device is then periodically refreshed to ensure data accuracy and integrity.IS42S16100C1-7B-TR also offers error checking and correction (ECC) capabilities, which allows the device to detect and correct errors that may occur during the Read and Write operations. This is especially important in mission-critical applications, where high levels of data integrity and reliability are required.

IS42S16100C1-7B-TR is a very versatile memory device, offering many different benefits for a variety of applications. Its high speed and data integrity make it an ideal choice for a range of embedded and telecoms applications. The device is also capable of supporting multiple processors, making it a great choice for multi-processor systems. Finally, its ECC capabilities make it a great option for mission-critical applications, where data integrity and reliability are paramount.

The specific data is subject to PDF, and the above content is for reference

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