IS42S16160B-6T Allicdata Electronics
Allicdata Part #:

IS42S16160B-6T-ND

Manufacturer Part#:

IS42S16160B-6T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5...
DataSheet: IS42S16160B-6T datasheetIS42S16160B-6T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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The IS42S16160B-6T is a type of Static Random Access Memory, or SRAM. It is an integrated circuit used to store information within a personal computer or other type of system. SRAM has a number of advantages over other types of memory, including faster access times and less power consumption. This makes SRAM very attractive for use in applications where speed and power consumption are paramount.

The IS42S16160B-6T is a SRAM based device with 16Mbits (2M x 8Bit) of storage capacity. It operates on 8V to 3.6 V Power Supply and requires data and control access signals of 3.3V to 0.8 V, 1.2V or 2.5V. It has an access time of 6ns and a cycle time of 10ns. It has an operating temperature of 0°C to 70°C and a data retention voltage of 1.2V to 1.0 V. It also has an endurance of 1,000,000 write cycles.

The IS42S16160B-6T is ideal for use in high frequency applications such as microprocessors, data transfer, embedded systems, and communication systems. The device is often used to buffer data between two systems or as a cache device. It can provide fast access to frequently used bits of data and can improve system performance. The device is also highly reliable and has a long life expectancy.

The IS42S16160B-6T works by using a set of electrodes or capacitors to store binary data. When a voltage is applied to one of these capacitors, it stores a 1 or a 0 depending on the type of logic used. This creates a static memory cell, which is used to store data even after power is removed from the system. Other types of SRAM have additional electrodes and are used for a wide variety of applications. The IS42S16160B-6T is designed for use in applications that need to store a large amount of data quickly and reliably.

The IS42S16160B-6T is a versatile device that is widely used in various applications. It is a reliable and efficient solution that can improve the speed and power of personal computers and other systems. It is also an ideal solution for applications where speed and power consumption are critical. The device is easy to use and has high levels of reliability, making it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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