IS42S16100E-6TL-TR

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IS42S16100E-6TL-TR is a type of memory device. It belongs to a larger series of IS4XX memory products which are designed for medium-speed access. This series of memory devices is suitable for applications requiring low to moderate memory density and medium speed access operations.

The IS42S16100E-6TL-TR is built around a two-transistor stacked transistor architecture. In this type of architecture, two transistors, one N-channel and one P-channel, are stacked on top of each other. This type of architecture offers higher speed and lower power consumption, as well as a more compact size. It is also easier to manufacture compared to traditional memory architectures.

The IS42S16100E-6TL-TR is a 16M (16 Megabit) Non-Volatile Memory. It offers fast access times and low power consumption, with a read/write speed of 12ns. It has a maximum page size of 128 bytes and can store up to 8M (8 Megabit) of data. The non-volatile nature of this type of memory ensures data remains stored even without power.

This type of memory is most commonly used in consumer electronics. It offers fast access speeds and low power consumption, making it ideal for consumer electronics applications where battery life is a consideration. It is also used in automotive, medical, factory automation and industrial control applications.

The IS42S16100E-6TL-TR is also used in embedded applications. It offers high speed and low power consumption, making it suitable for applications where power and speed are both important requirements. The device is ideal for applications such as data logging, image processing, and other high performance embedded applications.

The working principle of the IS42S16100E-6TL-TR is straightforward. It uses a stacked transistor memory architecture, where two transistors, one N-channel and one P-channel, are stacked on top of each other. When a request for data is sent, the N-channel transistor transfers electrons across a thin dielectric film and into the P-channel transistor. This triggers the P-channel to generate a voltage response that translates into the data. This data can then be read and written to the memory.

In summary, the IS42S16100E-6TL-TR is a type of non-volatile memory device. It is typically used in consumer electronics, automotive, medical, factory automation, and industrial control applications. It offers low power consumption, high speed access times and a maximum page size of 128 bytes. The working principle of the IS42S16100E-6TL-TR is based on a stacked transistor architecture, wherein electrons are transferred across a thin dielectric film and into the P-channel transistor, generating a voltage response that translates into data.

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