IS42S16100H-7TLI-TR Allicdata Electronics
Allicdata Part #:

706-1448-2-ND

Manufacturer Part#:

IS42S16100H-7TLI-TR

Price: $ 0.77
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 50TSOP II
More Detail: SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.5...
DataSheet: IS42S16100H-7TLI-TR datasheetIS42S16100H-7TLI-TR Datasheet/PDF
Quantity: 1000
1000 +: $ 0.69854
Stock 1000Can Ship Immediately
$ 0.77
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II
Description

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IS42S16100H-7TLI-TR is a type of memory integrated circuit module produced by Integrated Silicon Solution, Inc. It is composed of 1024K words x 4 bits of Static RAM. The device is designed to eliminate the need for multiple chips with DDR2 SDRAMs and provide a single package solution with full operations at speeds of 75MHz.

Application Field

The IS42S16100H-7TLI-TR is suitable for a variety of applications, including embedded systems, ultra-low power systems, multimedia applications, and portable devices. Its construction techniques enable the device to operate stably even under harsh environments with high temperature resistance and high-frequency switching. In applications such as audio-video systems, IS42S16100H-7TLI-TR can be used as an audio-video buffer to reduce access time and data transfer speed, while its low power consumption can reduce power consumption and thereby enhance the design of power efficient systems.

IS42S16100H-7TLI-TR can also be used in industrial automation systems to store data and parameter information. Its features also enable the module to be used for data analysis, data transmission and data buffering in such areas as industrial debugging and control. It can also be used in computer systems for storing BIOS or memory address mapping data, thereby increasing the stability of the system.

Working Principle

In order to meet the needs of different applications, IS42S16100H-7TLI-TR adopts a single-transistor floating-gate MOS transistor for its memory cells. It is a non-volatile memory module with a capacity of 1024K words x 4 bits. Its floating-gate MOS transistor has the characteristics of low power consumption and low heat dissipation. For example, in an audio-video application, the device can reduce the amount of power consumed by storing its data in the user-selected memory module, instead of on the main memory storage, thereby reducing overall power consumption.

In addition, the device has a fast Random Access Memory (RAM) refresh rate of up to 1,024 cycles per second. The cycle time is specified by the timing signals of the four input pins, with a cycle time of 74.17μs from each device. With the fast refresh rate and low power consumption, IS42S16100H-7TLI-TR is an ideal solution for embedded systems and ultra-low power systems.

In addition, IS42S16100H-7TLI-TR supports multiple synchronous and asynchronous operations of fast-page mode. Its Random Access Memory (RAM) access and data output times are both 2 clock cycles. In an asynchronous mode, the device supports the operation of an external asynchronous memory chip and can interface with the chip in order to reduce the time needed for data processing.

The IS42S16100H-7TLI-TR is also designed with a parity checking bit and seven error-detection bits, which are used to check the system\'s data correctness and reliability. In this way, the device can achieve data transmission and errors detection more effectively, thus making it suitable for critical enterprise applications.

Conclusion

All in all, IS42S16100H-7TLI-TR is a high-performance Static RAM memory module that can be applied in a variety of applications. It is designed with advanced MOS transistor and memory cells, featuring low power consumption, high speed random access memory refresh rate, fast-page mode synchronous and asynchronous operation, as well as parity bit and error-detection bits. It is able to handle data transfer tasks stably and reliably, making it an ideal choice for embedded system, ultra-low power systems, multimedia applications, and portable device solutions.

The specific data is subject to PDF, and the above content is for reference

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