IS42S16800D-75EBLI Allicdata Electronics
Allicdata Part #:

IS42S16800D-75EBLI-ND

Manufacturer Part#:

IS42S16800D-75EBLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 54MINIBGA
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 6....
DataSheet: IS42S16800D-75EBLI datasheetIS42S16800D-75EBLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 6.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-MiniBGA (8x13)
Description

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The IS42S16800D-75EBLI is a high-performance dynamic random access memory (DRAM) chip. It is designed for use in high-performance applications, such as networking, industrial control, digital surveillance, and computer gaming. The device provides high speed and reliable data storage in a low-profile form factor.

The IS42S16800D-75EBLI is a 4 Megabit ( Mb ) DRAM module that utilizes Double Data Rate (DDR) technology. DDR technology increases the data throughput of a memory module by double transferring data on both rising and falling edges of the clock signal. This results in faster speed and improved system performance, allowing bigger and more demanding operations.

The IS42S16800D-75EBLI has a 64-bit wide data bus and supports 128Mb/s data throughput. It also features a CAS Latency of 5, providing faster access times without compromising system performance. The module also has an operating temperature range of 0°C to 70°C, making it well suited for demanding industrial applications.

The main principle behind the IS42S16800D-75EBLI is the same as any other DRAM. Data is stored and retrieved from the module using a series of electrical pulses, a process referred to as a "read/write cycle". During a read/write cycle, a DRAM chip processes electrical pulses applied to it in order to initiate a data exchange. The voltage and duration of the pulses determine whether a bit of data is stored to, or retrieved from, the module.

The IS42S16800D-75EBLI is a popular choice for many system designers who require high-speed and reliable storage in a small form factor. Its DDR technology allows for faster access time at higher frequencies than other DRAM technologies. It is also ideal for industrial applications that require high-density memory and extreme temperature ranges.

The IS42S16800D-75EBLI is an excellent choice for a wide variety of applications, including networking, industrial control, digital surveillance, and computer gaming. Its DDR technology and wide temperature range make it a great choice for any system designer. Its small size and high speed also make it ideal for portable and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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