IS42S16800F-7BLI-TR Allicdata Electronics
Allicdata Part #:

IS42S16800F-7BLI-TR-ND

Manufacturer Part#:

IS42S16800F-7BLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 54TFBGA
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5....
DataSheet: IS42S16800F-7BLI-TR datasheetIS42S16800F-7BLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Description

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IS42S16800F-7BLI-TR are 512Mb SDRAM components are primarily intended for use in high performance memory subsystems. These components are based on the 16Mx8 organization, consisting of a fast page mode capable array and static column address recognition circuits. It operates at a clock frequency of 100MHz, providing a data transfer rate up to 250MB/s per device. The device is packaged in a 94-ball VFBGA (12mmx12mm) package.

The IS42S16800F-7BLI-TR offers a wide range of system performance applications such as memory subsystems and multimedia products. It is ideally suited for use in desktop computers and workstations, gaming systems, server blades and storage systems. It is also suitable for applications requiring high speed data transfer, such as network routers, switches and multimedia storage systems.

The IS42S16800F-7BLI-TR implements a high degree of functionality and performance in its application field, allowing for greater system flexibility. With a maximum read cycle time of 15ns and a maximum write cycle time of 18ns, it is capable of providing very fast access to data. It supports burst lengths of up to 8 and CAS latency of 2. It also supports auto-precharge and data masking to allow for better system control.

The IS42S16800F-7BLI-TR’s working principle is mainly based on the synchronous dynamic random access memory (SDRAM) technology. This type of memory works by synchronizing the access to data to a clock signal, which allows for faster access compared to asynchronous dynamic random access memory (DRAM). The memory is organized as a matrix of storage cells, which are accessed through a row address and column address. When a row address is provided, the data can be read from or written to the selected row. The column address allows the data to be read from or written to the selected column.

The IS42S16800F-7BLI-TR also supports a wide range of error correction techniques, such as ECC, parity, BCH and CRC. These are used to detect and/or correct errors that occur during the data read or write operations. This allows for improved data integrity and reliability.

The IS42S16800F-7BLI-TR is a high performance memory component designed specifically for memory subsystems. With its wide range of features and performance, it is perfect for applications that require high speed data transfer. Its high performance, reliability and error correction techniques make it an ideal choice for modern computer and storage systems.

The specific data is subject to PDF, and the above content is for reference

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