IS42S32400F-6TLI

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ISSI IS42S32400F-6TLI is a synchronous DRAM containing 3,072,256 words (24M bit) organized as 262144 words x 4 bits. ISSI IS42S32400F-6TLI is a high-speed dynamic random access memory (DRAM) device that has been designed with many of the same features found in Static RAMs such as high speed, low power consumption and fast clock access times. This makes it ideal for applications such as video, image, communications and data storage. The device operates with a single 3.3V power supply and has a clock access time of 6 ns.

IS42S32400F-6TLI is a 64Mb synchronous DRAM organized as a 4M × 16 interface. It is more capable than conventional SDRAM since it features 4K refresh cycles, 4-bank architecture, burst read and burst writes, burst lengths of 4, 8, and 16, and a programmable page size of 512×16. The device is optimized for higher bandwidth applications and is specified to operate at a clock frequency of up to 166Mhz. With its 6ns access time and high speed, the device is ideal for applications such as video storage and editing, image buffering, communications, and data storage.

The working principle of IS42S32400F-6TLI is based on data "noise" and read and write cycles. A Memory Array in the device consists of an array of cells, each of which stores a single bit of data. When a cell is activated, the data stored within it is read out, or “refreshed,” and then the cell is reset. The IS42S32400F-6TLI also uses a “signal management state machine” and “dynamic arrays” to manage the read and write cycles, as well as data noise. As data is written to the device cells, it creates a constant stream of noise and the signal management state machine reads and interprets this noise, making sure the data is correctly read and written. In addition, the dynamic arrays in the device serve to reduce power consumption and help maintain overall performance.

IS42S32400F-6TLI is a popular choice for applications such as video editing, data storage, and communications. It is capable of delivering high speed, low power consumption, and fast clock access times with its 4K refresh cycles, 4-bank architecture, and burst read and write capabilities. In addition, its programmable page size and signal management state machine make the device a reliable and efficient choice for memory applications.

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