IS42S81600D-6TL-TR

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IS42S81600D-6TL-TR is a member of ISSI\'s IS42S16xxx family of synchronous DRAMs targeted towards high speed system applications. The device is configured as 16M bits dense memory array organized as a 4M words x 4-bits standard DRAM.

The IS42S81600D-6TL-TR is a synchronous memory device accessed through a multiplexed address/data bus. A row address is transferred to the IS42S81600D-6TL-TR via the RAS# (Row Address Strobe) input pin followed by a Column address on the CAS# (Column Address Strobe) input pin. The data is placed on the DQ0—DQ31 pins loaded from the array while RAS# and CAS# are low. Data transfers with both false signals and valid addresses occur in 4 clock cycles.

The IS42S81600D-6TL-TR synthesizes the control of all of its control signals, the inputs (RAS#, CAS#, and WE#) and the outputs (DQ/DQM). This simplifies timing requirements and memory design. The device is also compatible with the 2K refresh and lowest power operation, and has minimal system decoupling requirements.

The IS42S81600D-6TL-TR operates from a single +3.3V power supply and is specified for the extended industrial temperature range of -40°C to +85°C, making it suitable for harsh industrial environments. Its built-in ECC (Error Checking and Correction) further enhances the system reliability. The device offers a variety of features that make it an ideal solution for applications such as digital audio, video/graphics, telecom, and medical imaging.

The IS42S81600D-6TL-TR memory is widely used in many types of application for its features. example: gaming applications such as Xbox, Playstation, and PC games, where the memory is used to store high-resolution pre-rendered images, terrain maps, and audio streams; servers applications require large amounts of memory to store both data and applications; and embedded applications such as industrial automation and automotive, which require robust memory solutions to operate reliably in extreme environment.

The working principle of IS42S81600D-6TL-TR can be broken down into two main stages: the cycle stage and the command stage. In the cycle stage, the IS42S81600D-6TL-TR is configured to accept commands through the RAS# and CAS# pins. These commands consist of either a write or a read, the type of address being passed, and the type of data being read or written. Once the command is given and accepted, the IS42S81600D-6TL-TR moves into the command stage. During this stage, the memory either sends a read or write request, or sends/receives data from/to the data-in and data-out lines respectively.

The cycle stage consists of two parts: the pre-charge cycle and the activate cycle. In the pre-charge cycle, the RAS# and CAS# pins are both pulsed high, activating the internal circuitry necessary to begin the command. In the activate cycle, both the RAS# and CAS# pins are pulsed low again, this time sending or receiving data. Once this is done, the memory moves into the command stage.

The command stage is where the most important part of the process happens. In this stage, the IS42S81600D-6TL-TR sends or receives data depending on the type of command sent in the previous stage. In a read command, data is read from memory locations within the 4M words and transferred to the data-in lines of the device. In a write command, data from the data-out lines is written to the requested memory locations.

IS42S81600D-6TL-TR memory device is an ideal choice for any system requiring a high-density and high-performance memory solution. Its features, such as ECC, low power operation, and simplified timing requirements make it an excellent option for many applications. Furthermore, with an extended temperature range of -40°C to +85°C, the IS42S81600D-6TL-TR is suitable for a wide variety of industrial systems.

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