IS42S83200B-7TLI Allicdata Electronics
Allicdata Part #:

IS42S83200B-7TLI-ND

Manufacturer Part#:

IS42S83200B-7TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 256Mb (32M x 8) Parallel 143MHz 5....
DataSheet: IS42S83200B-7TLI datasheetIS42S83200B-7TLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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IS42S83200B-7TLI is a popular memory device used in many industries. It is a type of DRAM (Dynamic Random Access Memory) device, a type of non-volatile, computer memory which is used to store varying amounts of data, often in large amounts. DRAM is one of the most common forms of memory used in computers, as well as a range of other electronic devices. DRAM is used in many applications, ranging from the basic operation of electronic data processing devices to more advanced and complex applications, such as powering digital signal processing (DSP) systems and machine learning applications.

The IS42S83200B-7TLI is an 8M x 16Bit x 4 Banks SDRAM, which offers asynchronous access with output and input data registers. This memory device is designed to support audio, video, graphics and data processing performance, offering an optimized solution for multimedia computing applications. It features an extended temperature range, and is suitable for a wide range of applications including PCs, servers and embedded systems. This memory device can be found in a variety of products such as PDAs, laptops and other portable device markets.

The IS42S83200B-7TLI is based on the EDO DRAM (Extended Data Output DRAM) architecture, meaning that it can operate at speeds up to 100MHz and can provide up to 40MBytes/s bandwidth. This type of DRAM is capable of providing superior performance over traditional DRAM, providing faster data access while using less power. Additionally, the IS42S83200B-7TLI is capable of operating at temperatures between 0°C and 70°C, making it suitable for a wide range of applications.

When it comes to the working principle of the IS42S83200B-7TLI, it is pretty simple. This memory device utilizes DRAM cells, which are made up of two components. The first component is the capacitor, which stores a charge, and serves as the memory element. The second component is the transistor, which acts as a switch, allowing the capacitor to be charged or discharged. The DRAM cells are arranged in a matrix, in which each cell is accessed according to its row and column address. During operation, the row and column addresses are provided to the memory device. The processor then sends a signal to the read register, which allows data to be read or written to the memory device.

The IS42S83200B-7TLI has a wide range of applications, from server and embedded systems to consumer electronics, audio and video applications. It provides enhanced performance, extended temperature range and an optimized solution for multimedia computing applications. With its powerful features and wide range of applications, the IS42S83200B-7TLI is a popular choice for many electronic device makers.

The specific data is subject to PDF, and the above content is for reference

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