IS42SM32200M-75BLI Allicdata Electronics
Allicdata Part #:

IS42SM32200M-75BLI-ND

Manufacturer Part#:

IS42SM32200M-75BLI

Price: $ 3.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 64M PARALLEL 90TFBGA
More Detail: SDRAM - Mobile Memory IC 64Mb (2M x 32) Parallel 1...
DataSheet: IS42SM32200M-75BLI datasheetIS42SM32200M-75BLI Datasheet/PDF
Quantity: 1000
240 +: $ 2.76053
Stock 1000Can Ship Immediately
$ 3.04
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 64Mb (2M x 32)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

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IS42SM32200M-75BLI is a type of memory developed by Integrated Silicon Solution Inc. It is widely used in computing, consumer electronics, and communication products. This type of memory uses static random access memory (SRAM) technology, which enables large storage capacities, high performance, and low power consumption.

The IS42SM32200M-75BLI memory is based on a 256K-bit x 8 organization. It operates at speed grades of 75, 66 and 50ns and has a power supply voltage range of+3.3V to +1.8V. It is a three-state common I/O memory and has a wide range of features such as power supply monitoring and programmable pipeline burst sizes of 2,4,8,16 and 32.

The main applications of IS42SM32200M-75BLI memory include devices that require high-speed performance such as networking and military equipment, point of sale (POS) systems, high-speed graphics cards, digital cameras and industrial controls. The memory is also used in embedded systems such as programmable logic controllers (PLCs) and real-time operating systems (RTOSs).

The working principle of IS42SM32200M-75BLI memory is based on static random access memory, which requires no clock signals for data retention. It consists of memory array and address register. The memory array has 16Mb of SRAM chips and is organized in a 256K-bit x 8 structure. Address pins are used to access data from the memory array. The address register stores the address of the memory cell, which is accessed to get the data. The Chip Enable (CE) signal is used to enable or disable the memory array. The output Enable (OE) signal is used to enable or disable the output bits.

The IS42SM32200M-75BLI memory is an ideal choice for high-speed applications. It has a high storage capacity, low power consumption, and is highly reliable. It is also extremely durable and can withstand extreme temperatures. The memory is also cost effective and easily integrates with existing systems.

The IS42SM32200M-75BLI memory is a versatile and reliable solution for many applications and ensures consistent performance in a variety of demanding environments. It is a reliable and cost-effective choice for many applications and is suitable for use in a variety of market segments.

The specific data is subject to PDF, and the above content is for reference

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