IS42VM16160D-8BL-TR Allicdata Electronics
Allicdata Part #:

IS42VM16160D-8BL-TR-ND

Manufacturer Part#:

IS42VM16160D-8BL-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TFBGA
More Detail: SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel...
DataSheet: IS42VM16160D-8BL-TR datasheetIS42VM16160D-8BL-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS42VM16160D-8BL-TR is a high-speed memory device which belongs to the Volatile memory category. With its 168-pin package, this particular device is specially designed for applications that require fast synchronization and data transfer. This device utilizes an asynchronous DRAM technology, built on a three-row-height dual in-line memory module (DIMM). For those applications that require extremely fast data processing and transmission, this product is a perfect choice.

The main feature of the IS42VM16160D-8BL-TR is its consistence high-speed operations. This memory device can provide outstanding speed performance with its dual in-line memory module. It also contains a built-in error-correction code (ECC) for error detection and correction. Moreover, this device has an exceptional power efficiency and low standby current, making it the perfect choice for applications that require high-speed performance with a low power requirement.

The working principle of the IS42VM16160D-8BL-TR lies in its two-level address architecture. This type of memory device functions with the two-level address architecture. It utilizes the bank address, which is determined digitally, as the first level address, followed by the Row Address, which is determined by the voltage, as the second level address. The Memory Controller is responsible for interpreting digital values and applying associated voltages to the address and data lines.

This incredible memory device has a broad range of applications. It has been widely accepted in the medical, medical robotics, aerospace and military fields for its high data transfer speed and excellent power efficiency. Additionally, the IS42VM16160D-8BL-TR has been applied to various commercial applications for its great stability and reliability.

Overall, the IS42VM16160D-8BL-TR is an exceptional memory device that is designed to provide a consistent high-speed operation, along with impeccable power efficiency and reliability. Its two-level address architecture and built-in error-correction code (ECC) make it an ideal choice for various types of applications, ranging from medical and aerospace fields to robotics and military operations.

The specific data is subject to PDF, and the above content is for reference

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