Allicdata Part #: | IS45S16400F-6TLA1-ND |
Manufacturer Part#: |
IS45S16400F-6TLA1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 64M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4... |
DataSheet: | IS45S16400F-6TLA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (4M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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IS45S16400F-6TLA1 is a type of memory chip which is used in many applications. It is a non-volatile memory, meaning that it can store information even when power is removed. It can be used in a variety of applications, such as in computers, industrial applications, and consumer electronics. The IS45S16400F-6TLA1 is composed of an integrated circuit that contains a grid of cells, each of which can store one bit of digital data. It is a popular choice for many applications because it has the ability to store large amounts of data and it\'s highly reliable and low-cost.
One of the main applications of IS45S16400F-6TLA1 is in the computer industry. It is used in desktop and laptop computers, as well as gaming consoles and other computing devices. It is also used in data centers as a form of storage for large databases. It is particularly useful for random access memory (RAM) and persistent storage because of its non-volatility. In addition to computers, the IS45S16400F-6TLA1 is also used in industrial applications such as medical equipment, automotive systems, and robotics.
The IS45S16400F-6TLA1 has several different types of memory, such as static random access memory (SRAM), dynamic random access memory (DRAM), and flash memory. Each of these types of memory has its own set of advantages and disadvantages. SRAM is generally used for high-speed data storage, since it has a high read and write speed. DRAM can be used for storing large amounts of data and has a relatively low cost. Flash memory is used for storing data that needs to be accessed quickly and is used in computers and other devices that need to access data quickly.
The working principle of IS45S16400F-6TLA1 is quite straightforward. Each cell in the memory array is composed of two transistors, a capacitor, and a select gate. The voltage state stored in each cell is determined by the state of the select gate. A high voltage indicates that the cell holds a 1, and a low voltage indicates that the cell holds a 0. When the cells are read, the voltage state is interpreted as either a 1 or 0. When the cells are written, the voltage state is changed by applying a voltage signal to the select gate.
The IS45S16400F-6TLA1 is an important component in many types of applications, as it is reliable and low-cost. Its versatility and ability to store large amounts of data make it a popular choice for many applications. Its simple working principle makes it easy to use, and its non-volatility makes it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IS45S32400B-6BLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90T... |
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