IS45S16400F-7TLA2-TR Allicdata Electronics
Allicdata Part #:

IS45S16400F-7TLA2-TR-ND

Manufacturer Part#:

IS45S16400F-7TLA2-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 64M PARALLEL 50TSOP II
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4...
DataSheet: IS45S16400F-7TLA2-TR datasheetIS45S16400F-7TLA2-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II
Description

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The IS45S16400F-7TLA2-TR is a type of memory used for storage and retrieval of data. It is a Flash memory device that can store up to 16MB of data. It is based on the 65nm Floating Gate technology, which provides higher program/erase performance and data reliability. This memory device can be used in a wide range of applications, such as digital video and audio storage, embedded systems and general storage applications. The IS45S16400F-7TLA2-TR can operate at a clock frequency of up to 133MHz and is also suitable for high-speed data transfer applications.

The IS45S16400F-7TLA2-TR has several features that make it an ideal choice for a wide range of applications. It provides an array of 144Mbits (16MB) of memory cells that are organized in multiple blocks. All blocks can be programmed and erased at the same time or the blocks can be erased individually. In addition, the IS45S16400F-7TLA2-TR supports two fast burst modes, single-cycle and Page programming/erasing. It also features advanced error correcting and wear-leveling algorithms for reliable data storage.

The IS45S16400F-7TLA2-TR is also capable of sustaining up to 100 thousand program-erase cycles and can operate over a wide temperature range from -40°C to +85°C without any operational limitations. Moreover, this memory device has Power Down and Deep Power Down modes which allow it to minimize power consumption and extend its reliable operation time in mobile and portable applications.

The IS45S16400F-7TLA2-TR has several features which make it useful for numerous applications. It is used for the storage of digital video, audio and imaging data; for embedded systems and in general storage applications. The IS45S16400F-7TLA2-TR can also be used for data logging and in gaming devices. It is also suitable for use in medical and portable applications such as medical sensors, inhalers and glucose meters.

The IS45S16400F-7TLA2-TR works on the basis of the 65nm Floating Gate technology, which is a non-volatile storage technology. This technology stores the data in an electric field between the source and drain of the MOSFET which acts as the memory cell. The data is stored in the form of a charge, which can be sensed by an electrical circuit and programmed or erased as necessary. This type of memory is used in a wide variety of applications, including automotive systems and mobile phones.

The IS45S16400F-7TLA2-TR is designed to provide reliable data storage and retrieval. It also ensures a high level of program and erase performance and data reliability. This device is suitable for a wide range of applications and its advanced features provide it with an advantage in high-speed data transfer applications. The IS45S16400F-7TLA2-TR is the perfect choice for storage and data transfer applications.

The specific data is subject to PDF, and the above content is for reference

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