IS45S16800F-7TLA2-TR Allicdata Electronics
Allicdata Part #:

IS45S16800F-7TLA2-TR-ND

Manufacturer Part#:

IS45S16800F-7TLA2-TR

Price: $ 3.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5....
DataSheet: IS45S16800F-7TLA2-TR datasheetIS45S16800F-7TLA2-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 3.03203
Stock 1000Can Ship Immediately
$ 3.33
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS45S16800F-7TLA2-TR, a 16Mb synchronous burst SRAM based on a single 1.8V power supply, is a type of memory device. It was designed by Fuji Electric, a leading manufacturer of memory devices for the consumer and commercial markets.

This device is suitable for applications where low power and high voltage are important, such as telecommunications, broadband access, and portable consumer devices. Additionally, the device can be used in areas such as test and measurement, entertainment and consumer electronics, and medical applications.

The IS45S16800F-7TLA2-TR uses the synchronous burst architecture, which is a type of architecture that requires a single clock signal for accessing data. This architecture is highly efficient and can increase the maximum data rate of the device. The device provides an access time of less than 1 nanoseconds, making it an ideal memory device for applications that require data transfer at high speeds.

The IS45S16800F-7TLA2-TR operates on a single 1.8V supply voltage and consumes a maximum of 800uA when active. It also has two standby modes that allow it to reduce its current consumption. This provides users with flexibility to extend the battery life of their products.

The IS45S16800F-7TLA2-TR is designed to operate at temperatures from -40c to 85c, making it suitable for use in high-temperature applications. The device also features an internal write protection feature that prevents any data from being written or erased.

The IS45S16800F-7TLA2-TR also features an asynchronous bus interface for access to data, allowing users to program and control the device. Additionally, the device has an on-chip EPROM for storing data, providing users with the ability to perform complicated manufacturing operations.

In summary, the IS45S16800F-7TLA2-TR is a low-power memory device designed to offer high speed data access and reliability. It is suitable for applications such as telecommunications, broadband access, and consumer electronics, as well as medical applications. Furthermore, the device has an asynchronous bus interface and an on-chip EPROM to facilitate programming and control.

The specific data is subject to PDF, and the above content is for reference

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