IS45S32200E-7TLA2

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	64Mb (2M x 32)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package:	86-TSOP II

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IS45S32200E-7TLA2 is a high-performance and cost-effective double data-rate 3 (DDR3) synchronous dynamic random access memory (SDRAM) component. It can achieve up to 1600Mbps data transfer rate per pin and is suitable for a wide range of memory applications. It has a host of features that make it an ideal choice for applications with high-bandwidth throughput, such as multimedia applications and gaming.In terms of its application field, IS45S32200E-7TLA2 can be used in a wide range of memory applications, such as server systems, In-Vehicle-Infotainment (IVI) systems, STB systems, industrial automation and gaming consoles. It is suitable for applications that require high-bandwidth throughput, such as multimedia applications and gaming. Moreover, it is also suitable for applications that require high-reliability, high-endurance and low-power consumption.In terms of its working principle, IS45S32200E-7TLA2 is based on the DDR3 SDRAM architecture, which is a high-performance and cost-effective way of using DRAM. In this type of architecture, data is transferred from the DRAM chip to the controller in blocks of 64 bits (usually referred to as a "wordline"), which is then broken into two 32-bit transfers for a total of 128 bits per transaction. This architecture significantly improves the overall performance and throughput of memory transactions.The IS45S32200E-7TLA2 also uses a Sense Amp Physical-level-derated (SAPL) architecture, which reduces the power consumption of the chip. This architecture works by automatically recognizing and disabling segments of the chip that are underutilized during certain memory operations, thereby reducing the power consumption of the chip. Furthermore, the chip also features an on-chip power supply management circuit that dynamically adjusts the power consumption of the chip depending on the load it is handling. Lastly, the IS45S32200E-7TLA2 utilizes a data prefetch technique that allows the chip to fetch data out of the memory before it is requested, thereby significantly improving the overall data transfer rates. This technology is essential in applications that require high-speed data transfer and a high-bandwidth throughput. In conclusion, the IS45S32200E-7TLA2 is a high-performance, cost-effective and reliable double data-rate 3 synchronous dynamic random access memory component suitable for a wide range of memory applications. With its advanced features such as the Sense Amp Physical-level-derated architecture and data prefetch technique, it is ideal for applications with high-bandwidth throughput, such as multimedia applications and gaming.

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