IS45S16800B-7TLA1

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IS45S16800B-7TLA1 is a fabless integrated circuit company based on semiconductor technology. It is a lower-capacity module containing a dynamic random-access memory (DRAM) that can store up to 16 million bits. It is often used for computer memory modules and embedded applications such as memory for small form-factor televisions and other audio-visual devices.

The IS45S16800B-7TLA1 is designed to improve the performance of memory applications. It utilizes an advanced low-power dynamic access memory (LPDRAM) architecture that allows for an effective combination of speed and low power consumption. This product has a 0.35µm process technology which allows for an optimal balance between temperature, bit rate, and data retention. In addition, its leakage-immune design provides superior reliability and compatibility.

The IS45S16800B-7TLA1 is capable of operating at a clock frequency of up to 100MHz and can transfer data at a rate up to 800Mbps. It is also highly compatible with a wide range of processors and utilizes a Double Activity Signal (DAS) design to save power and improve refresh time. This integrated circuit has an array of features to improve product reliability and enable its application in a wide range of memory products.

In terms of its application field, the IS45S16800B-7TLA1 can be used for a wide range of applications including digital video players, digital cameras, portable audio players, set-top boxes, automotive applications, and other embedded applications. Furthermore, this memory module is suitable for low power systems and is compatible with most popular PC operating systems, making it suitable for use in both desktop and laptop computers.

When it comes to its working principle, the IS45S16800B-7TLA1 utilizes advanced power-management techniques to provide a low-power solution. It is based on the ‘Read’, ‘Write’, and ‘Refresh’ operations, which allow for quick access to stored data. The chip works by internally pre-charging all stored bits which minimizes the power consumption of the device and at the same time ensures that data is always accessible. Furthermore, it features an innovative ‘bootstrap’ circuit which prevents memory corruption by pre-charging the data signals during the initial phase of operation.

At the same time, the IS45S16800B-7TLA1 employs a high-performance command sequencer to control the sequence of writes and reads taking place in the memory. This sequencer continuously evaluates the command stream to determine the timing of the various memory operations, and it also offers multi-level error correction capabilities.

In summary, the IS45S16800B-7TLA1 is a highly integrated, low-power dynamic access memory module which is suitable for a wide range of memory applications. Its innovative power-management techniques minimize power consumption thereby providing an efficient solution with improved refresh time. Additionally, its wide compatibility range allows it to be used in various mobile and embedded products.

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