IS45S32400E-6TLA1-TR

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The IS45S32400E-6TLA1-TR is a high-performance, low-power integrated memory solution designed for computationally intensive embedded applications. It features an asynchronous interface and a four bank architecture with a separate page register for each bank. The four banks can be configured via the memory configuration registers (MCRs). The part also features on-chip error detection and correction logic, interrupted support and interrupt coalescing to improve system performance.

The IS45S32400E-6TLA1-TR is ideal for mobile and embedded applications such as GSM/GPRS, EDGE, HSDPA, HSUPA, HSPA+, and WiMAX baseband chip sets, industrial, automotive and consumer applications. Its advanced error detection and correction (EDAC) logic also ensure reliable operation in harsh environment conditions.

The IS45S32400E‑6TLA1‑TR is a 32‑Mbit memory solution with a 6‑ns access time and a low standby current consumption. The device is organized as 4 banks of 8Mbits each. Each bank is further organized as a 16K × 128 array. It is designed to support an asynchronous burst Flash controller interface with an industry standard three-wire interface.

The IS45S32400E-6TLA1-TR has an additional 2 pins for power supply and ground. The power up sequence for the part must be strictly followed. All necessary initialization is done automatically after power up. It is also designed to support both synchronous and asynchronous burst modes address and data transfers. The chip supports various widths of burst transfers or read operations, ranging from 8 to 512 burst clock cycles, with the data being transfered over the data bus in 8, 16 or 32 bit wide chunks.

The IS45S32400E-6TLA1-TR supports a variety of error correcting algorithms such as cyclic redundancy check (CRC), parity checking, and error detection and correction (EDAC). EDAC allows the device to detect, identify, and correct single bit errors in the data. The EDAC algorithms are implemented directly as logic on the device, and require no additional off-chip components.

The IS45S32400E-6TLA1-TR features a high write throughput, allowing large data blocks to be written quickly. It also features interrupt coalescing and a page register for each bank. This allows multiple pages of data to be written quickly, improving system performance. The page register also allows for a page based read operation, meaning that only the data from the page specified in the page register will be read out.

In addition, the IS45S32400E-6TLA1-TR also features several power saving modes. In the Standby Mode, the device can consumme less than 1 μA of current. This reduces power consumption and extends battery life of the system. The device also supports Burst Mode and Deep Sleep Mode, which are used when the system is idle, further reducing power consumption and improving system performance.

Overall, the IS45S32400E-6TLA1-TR is a highly integrated, low-power memory device designed for embedded applications. It features an asynchronous interface and a four-bank architecture with error detection and correction, interrupt support and interrupt coalescing for improved system performance. The on-chip error detection and correction logic ensure reliable operation in harsh environments, while the low power consumption and power-saving modes help extend battery life.

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