IS45S32400E-7TLA1 Allicdata Electronics
Allicdata Part #:

IS45S32400E-7TLA1-ND

Manufacturer Part#:

IS45S32400E-7TLA1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5....
DataSheet: IS45S32400E-7TLA1 datasheetIS45S32400E-7TLA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

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The IS45S32400E-7TLA1, or Flash Memory, is a type of computer memory used in a variety of applications, including digital cameras, portable media players, game consoles, and other consumer electronics. Flash Memory is a type of non-volatile memory, meaning that it retains its stored data even when power is removed from the device. This type of memory is especially advantageous for mobile devices, since it does not require a constant power supply.

The IS45S32400E-7TLA1 is a four-channel device, using a 25nm process technology to provide greater bandwidth and higher performance than earlier memory technologies. It is designed to be used in a variety of applications, including network routers, surveillance, embedded systems, and video game consoles. The IS45S32400E-7TLA1 has a wide range of features, including an on-die error correction code (ECC) for improved data accuracy. Its on-die ECC capability also allows for speedier data transfers, by reducing the amount of time spent checking for and correcting errors.

From a technical standpoint, the IS45S32400E-7TLA1 is a multi-level cell (MLC) non-volatile NAND flash memory. MLC flash memory stores two or more bits per memory cell, allowing for higher density and a higher capacity than single-level cell (SLC) memory. The IS45S32400E-7TLA1 has a maximum read speed of 200MB/s, with a program/erase speed of 50MB/s. It also has a random access time of 40us and supports five address pins.

The working principle of the IS45S32400E-7TLA1 is based on the same basic principles of other types of computer memory. Flash memory consists of an array of memory cells, each of which can store a bit of information. Data is written to and read from the memory cells using a set of control and address signals. The memory cells can be read in a random order, allowing for fast access to the data stored in them. When a write operation is initiated, the controller sends the appropriate address signals to locate the memory cells that need to be written to. It then sends a write command to the selected cells, along with the data that is to be stored.

The IS45S32400E-7TLA1 is a reliable and high-performance type of memory that is suitable for use in a wide range of applications. Its small size, high density, and low power consumption make it an attractive option for a variety of products, particularly mobile devices. Its on-die ECC capabilities improve data accuracy and speed up data transfers, while its MLC architecture increases its capacity and density compared to SLC memories.

The specific data is subject to PDF, and the above content is for reference

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