IS61C6416AL-12TLI-TR Allicdata Electronics

IS61C6416AL-12TLI-TR Integrated Circuits (ICs)

Allicdata Part #:

IS61C6416AL-12TLI-TR-ND

Manufacturer Part#:

IS61C6416AL-12TLI-TR

Price: $ 1.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IS61C6416AL-12TLI-TR datasheetIS61C6416AL-12TLI-TR Datasheet/PDF
Quantity: 1000
1000 +: $ 0.94303
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The IS61C6416AL-12TLI-TR memory is a high performance SRAM (static random access memory) integrated circuit that is specifically designed to provide high speed operation. The IS61C6416AL-12TLI-TR has many advantages over other types of memory, such as low power consumption, and high density capacity. Additionally, this type of memory is relatively easy to use, making it an attractive option for a wide range of applications.

The IS61C6416AL-12TLI-TR is a 128-kilobit (Kb) SRAM with an access time of 12 nanoseconds (ns). It is designed to be organized as 8,192 words by 8 bits of data for a total memory capacity of 64Kx8. The IC operates from a single +3.3V supply, and is packaged in the very small 12-lead Thin Shrink Small Outline (TSSOP) package. This small form factor allows it to be used in even the smallest electronics projects.

One of the main reasons that this SRAM is so popular is its low power consumption. It uses only 5mA of active current and only 20μA of standby current in typical low power applications. This allows it to be used in projects where battery life is essential, or where low power is extremely important. Additionally, it runs at temperatures ranging from -55°C to +125°C, making it ideal for a variety of environments.

The IS61C6416AL-12TLI-TR SRAM offers a variety of advanced features, such as write protection, burst accesses, and data auto-precharging. Its available organization modes include Auto-Increment, Random, and Burst access, respectively for x1 and x2 mode accesses. One of the primary features of this memory is its high speed operation, which is achieved by its low internal latency.

The working principle of the IS61C6416AL-12TLI-TR is quite simple and straightforward. A clock signal is used to control the flow of data into and out of the storage cells. When data needs to be written into the memory, the data is written into individual cells by activating the appropriate address lines; these address lines remain active until the write operation is complete. Once the data is written, it can then be read by accessing the address lines again.

The IS61C6416AL-12TLI-TR memory is ideal for many different applications. It is particularly well suited for use in applications that require fast access times and low power consumption. It is a versatile, reliable, and relatively low-cost memory solution for a range of embedded applications. Some examples of applications that could use this SRAM include digital signal processors, embedded controllers, network servers, data acquisition systems, and robot controllers.

In conclusion, the IS61C6416AL-12TLI-TR SRAM is a versatile, high speed and low power consumption memory solution that is suitable for a range of applications. Its ease of use and variety of features make it an attractive option for many embedded applications. With its affordable cost and reliable performance, this SRAM is an excellent option for those looking for a fast, reliable, and low cost memory solution.

The specific data is subject to PDF, and the above content is for reference

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