IS61QDPB42M36A2-500M3LI Allicdata Electronics
Allicdata Part #:

IS61QDPB42M36A2-500M3LI-ND

Manufacturer Part#:

IS61QDPB42M36A2-500M3LI

Price: $ 75.59
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 72M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUADP Memory IC 72Mb (2M x 36)...
DataSheet: IS61QDPB42M36A2-500M3LI datasheetIS61QDPB42M36A2-500M3LI Datasheet/PDF
Quantity: 1000
105 +: $ 68.72100
Stock 1000Can Ship Immediately
$ 75.59
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUADP
Memory Size: 72Mb (2M x 36)
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: --
Access Time: 8.4ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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Memories have been around for a long time and have become an integral part of today\'s world. They are used to store data, whether it is personal information, images, audio or video. One type of memory is IS61QDPB42M36A2-500M3LI, which is commonly used in multi-component, high-density applications. This type of memory is used in industrial, automotive and military applications due to its small size, reliability, and capacity.

IS61QDPB42M36A2-500M3LI is a type of non-volatile memory that is used in a variety of applications. Its main purpose is to store information, but it can also be used to retain data such as passwords, security codes and other crucial data. The memory can be programmed and erased many times without deteriorating. It is also suitable for high-speed data access due to its fast read/write times.

The IS61QDPB42M36A2-500M3LI is designed to operate in an industrial environment and is available in a variety of packaging types. The device comes with features like four bus lines, a write protect, and 8K and 16K of memory. It also has several power management features, such as hibernation, sleep mode and power down for low power consumption. Additionally, it has an on-chip ECC to prevent errors caused by ambient noise or electrical interference.

The working principle of IS61QDPB42M36A2-500M3LI is quite simple. Its memory cells are arranged in a grid, much like a ‘matrix’, and each cell has two electrodes — one for the voltage supply, and one output or ‘sense’ electrode. By applying a voltage to the cells, the data is ‘written’ or stored in them. To read the data stored, the voltage is applied in reverse, and the output electrode will provide an output depending on the data stored. This is the basis of IS61QDPB42M36A2-500M3LI\'s operation.

When used in a system design, the IS61QDPB42M36A2-500M3LI memory can store instructions, data, and states, resulting in increased system performance and reliability. The device is also compatible with a wide range of controllers, allowing designers to choose the best device to meet their system requirements. Additionally, its non-volatility helps protect data in the event of a power failure, which makes it suitable for embedded and automotive applications.

IS61QDPB42M36A2-500M3LI is a versatile, robust, and reliable memory option for a variety of applications, from industrial embedded and automotive systems to military use. Its flexibility, high density, and small size make it a great choice for many system designs. With its fast read/write times, power management features, and ECC protection, the IS61QDPB42M36A2-500M3LI memory is a reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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