IS61WV51216BLL-10MLI-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	2.4 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-miniBGA (9x11)

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IS61WV51216BLL-10MLI-TR Memory

IS61WV51216BLL-10MLI-TR is a type of semiconductor memory, more specifically a double-data-rate (DDR) synchronous dynamic random-access memory (SDRAM). Designed as a high-performance memory device, the IS61WV51216BLL-10MLI-TR is ideal for applications that demand maximum performance and data bandwidth.Available in a 208-pin small outline dual in-line memory module (SODIMM), the IS61WV51216BLL-10MLI-TR offers an impressive data rate of 4,266 megatransfers per second (MT/s) and a low latency of 2.5 CL, allowing for fast data transfer speeds and improved system performance. The IS61WV51216BLL-10MLI-TR also offers support for multiple memory types, including DDR3 and DDR4, making it a highly versatile memory device for a range of applications.

Application field of IS61WV51216BLL-10MLI-TR

The IS61WV51216BLL-10MLI-TR is suitable for a range of high-performance applications, including gaming, rendering, and other data intensive tasks. With its high data transfer rate and low latency, IS61WV51216BLL-10MLI-TR provides improved system responsiveness and faster load times, resulting in a superior user experience. The IS61WV51216BLL-10MLI-TR is also ideal for embedded applications such as automotive, industrial automation, and medical imaging. It offers superior power efficiency, helping to reduce energy consumption and overall system costs.

Working principle of IS61WV51216BLL-10MLI-TR

As with all DDR SDRAM devices, the IS61WV51216BLL-10MLI-TR operates using a double data rate (DDR) architecture. This allows the device to transfer data on both the rising and falling edges of the clock signal. By doubling the data rate, the IS61WV51216BLL-10MLI-TR operates at 4,266 MT/s, offering faster data transfer speeds than single data rate (SDR) memories.The IS61WV51216BLL-10MLI-TR also offers an extended temperature range of -40°C to 95°C and is rated for 1.6V operation. This helps to reduce power consumption and provides improved system stability and reliability.The IS61WV51216BLL-10MLI-TR also supports multiple memory types and is backwards compatible with other DDR SDRAM devices, providing a versatile and cost-effective memory solution.

Conclusion

The IS61WV51216BLL-10MLI-TR is a high-performance memory device, offering an impressive data rate of 4,266 megatransfers per second and low latency. It is ideal for a range of applications, including gaming, rendering, automotive, industrial automation, and medical imaging. The IS61WV51216BLL-10MLI-TR also offers an extended temperature range and is rated for 1.6V operation, helping to reduce power consumption and improve system stability and reliability. With its high performance and extended temperature range, the IS61WV51216BLL-10MLI-TR is an ideal memory solution for a wide range of applications.

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