IS61WV5128BLL-10KLI

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The IS61WV5128BLL-10KLI is a type of memory device. It is a high-density, low-cost, high-performance CMOS Static Random Access Memory (SRAM) device. It can be used in a variety of applications and has a wide range of working principles.

The IS61WV5128BLL-10KLI is a 512K (32K x 16) Static Random Access Memory (SRAM) device. It is a low-voltage, CMOS device with a 3.0V or 2.7V±10% supply voltage. The parallel address bus consists of 11 address lines A0-A10 and the data bus consists of 16 bidirectional data lines D0-D15. The device has one chip enable (CE1) control input, one output enable (OE) control input and one write enable (WE) control input. The device features asynchronous active low address and control input signals and an asynchronous active high data output enable (DOE) control input.

The IS61WV5128BLL-10KLI can be used in a variety of applications, such as industrial, automotive, consumer and communications applications. It can be used to store, retrieve and manipulate data for a wide range of applications. In industrial applications, it can be used to control automated machines and processes. In automotive applications it can be used to monitor and control vehicle systems such as engine management, power steering, ABS systems and traction control. In consumer applications it can be used to store music and video data, as well as video games and other multimedia applications. In communications applications it can be used to store voice and data communications between devices.

The working principle of the device is based on the static random access memory (SRAM) concept. The basic operation of a static random access memory (SRAM) is that it stores data in a static form and allows it to be accessed randomly. It is composed of transistors and capacitors, where each transistor acts as a switch and the capacitors store the data. A memory cell is accessed based on a row address and column address. When the row address is selected, the data on the selected row is transferred to the data lines. When the column address is selected, the data transferred to the data lines is written to or read from the memory cell. The data is then either written to or read from the memory cell.

The IS61WV5128BLL-10KLI can be used in a variety of applications and has a wide range of working principles. It is a low-voltage, CMOS device with a 3.0V or 2.7V±10% supply voltage and has a parallel address bus consisting of 11 address lines A0-A10 and a data bus consisting of 16 bidirectional data lines D0-D15. It has one chip enable (CE1) control input, one output enable (OE) control input, and one write enable (WE) control input. The device features asynchronous active low address and control input signals and an asynchronous active high data output enable (DOE) control input. Furthermore, the device\'s working principle is based on the static random access memory (SRAM) concept. With its wide range of applications and working principles, the IS61WV5128BLL-10KLI is an ideal memory device for a variety of applications.

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