IS61WV102416DBLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1541-ND

Manufacturer Part#:

IS61WV102416DBLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 16M PARALLEL 48TSOP I
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: IS61WV102416DBLL-10TLI datasheetIS61WV102416DBLL-10TLI Datasheet/PDF
Quantity: 227
Stock 227Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory

The IS61WV102416DBLL-10TLI is a memory component used in many applications. The component is designed to store data in a fast and efficient manner, allowing users to quickly access the data they need. This component also has a wide range of applications, such as data storage in applications, memory buffers, and more. The component is made up of an array of 16K x 16bit CMOS static RAM cells. It is capable of operating at access times as low as 10ns for fast operation. It is also capable of operating at temperatures from 0° to + 70° Celsius making it suitable for use in industrial and automotive applications.

The component utilizes the RAM data cell architecture to provide high-performance memory operations. The RAM data cell is made up of two parts: a row and a column. The row is an inverter connected to the bit line and is responsible for driving data to the bit line. The column is made up of three transistors that are responsible for controlling the data flow from the row to the bit line. When the RAM cell is enabled, the three transistors switch on, allowing data to flow from the row to the bit line. When the RAM cell is disabled, the transistors switch off, preventing data from flowing from the row to the bit line.

The component has several features making it well-suited for use in memory buffer applications. The component is capable of operating in multiple power-down modes that allow users to switch between active and inactive states. It also supports read-during-write and write-during-read operations, enabling fast data access. It also has an automatic power-down feature that enables the component to enter a low power state when not in use. This low-power state reduces power consumption and helps extend the component\'s lifetime.

The component is available in a variety of packages, such as a surface mount package, a through-hole package, and dual in-line packages. This allows users to choose the package that best suits their requirements. The component is also compatible with most logic families, making it suitable for use with a wide range of applications.

The IS61WV102416DBLL-10TLI is a versatile and reliable component that is suitable for a wide range of applications and can be used in memory buffer, data storage, and many other applications. Its multiple power-down modes, read-during-write and write-during-read operation, and automatic power-down feature make it a great choice for those looking for a component with excellent features and performance.

The specific data is subject to PDF, and the above content is for reference

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