IS61DDPB42M18A-400M3L

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, DDR IIP
Memory Size:	36Mb (2M x 18)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.71 V ~ 1.89 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-LFBGA (15x17)

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Introduction

IS61DDPB42M18A-400M3L is a type of memory device. This device is a Dynamic RAM consisting of 6Mb of CMOS high-speed Static RAM, organized as a 4Mx18 configuration and driven by a 1M bit cell. It is used in various applications such as memory-intensive applications, embedded system applications, and electronic game applications. The device can be used to provide high speed and low power consumption, reliable and high density memory solutions.

Application Field

IS61DDPB42M18A-400M3L is used in many applications that require memory-intensive tasks. It has the capability to provide a high speed, low power consumption and reliable memory solution. This device can be used in embedded system applications such as industrial control systems, consumer goods, and office automation devices. It is also used in electronic game applications due to its high-speed and low power consumption. Moreover, this device can be utilized in applications that require large amount of data storage such as digital cameras, camcorders and hard disk drives.

Working Principle

The IS61DDPB42M18A-400M3L is a dynamic RAM (DRAM) device that utilizes 6Mb of CMOS high-speed Static RAM, arranged in a 4Mx18 configuration. This provides a wide range of fast, reliable and low powered memory solutions. The device is driven by a 1M bit cell, which allows for access at high speeds. The device has an operating speed of 100 MHz, providing a bandwidth of 800 Mbit/s.The device uses a write/read timing circuit that allows for fast access. It also has a Data Mask register that can be used to temporarily block data from being written or read from the device. Furthermore, the device has a self refresh mode that allows it to maintain its memory contents without any external power supply.The IS61DDPB42M18A-400M3L also has a wide operating temperature range and Redundant Array of Independent Disks (RAID) support. This allows the device to be used in various conditions and to provide reliable data storage solutions.

Conclusion

IS61DDPB42M18A-400M3L is a Dynamic RAM device designed for high-speed, reliable and low powered memory solutions. It has 6Mb of CMOS high-speed Static RAM, organized as a 4Mx18 configuration and driven by a 1Mbit cell. It is typically used in embedded systems, electronic game applications and in applications that require large data storage. The device has a write/read timing circuit, a Data Mask register and self refresh mode for fast access and reliable data storage. It can be used in various environments due to its wide operating temperature range and RAID support.

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