IS61LF25636A-7.5TQI

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The IS61LF25636A-7.5TQI is a high-density non-volatile 2 application specific integrated circuit (ASIC) memory that is a 7.5-volt memory device composed of 256K x 36 bits of flash memory. This integrated circuit is known for its fast single write cycle operation and for use in applications where space conservation is of utmost importance. The IS61LF25636A-7.5TQI is the first memory device to offer a second-generation embedded flash memory at a maximum speed of 10 MHz, allowing for quick data read and write operations.This integrated circuit is equipped with multiple configurable power-saving modes, including a low power standby mode to prevent data corruption in the memory during extended periods of inactivity, as well as a power saving mode for reducing power consumption during periods of inactivity. Employing the IS61LF25636A-7.5TQI memory device in applications can help reduce the overall size and cost of the system, while still providing an improved performance over typical mass storage solutions.

The IS61LF25636A-7.5TQI memory is typically used in applications such as embedded systems, automotive, medical, industrial, and hand-held applications. In embedded systems, the memory device is used to store information in static random access memory (SRAM) or flash memory, enabling the system to retain data even when power is removed. The integrated circuit is also used in automotive applications to store diagnostic and system parameters, such as max speed, braking pressure, and engine temperature. In medical and industrial applications, the device is used to store patient information and programmable control settings, respectively.

The working principle of the IS61LF25636A-7.5TQI is based on its flash memory cell architecture, which is composed of an array of single-transistor DRAM cells. Each of these DRAM-based cells are programmed via a single write cycle, in which electrons are selectively transferred from the cell’s internal floating gate to the source-drain channel. This data is then stored in the cell’s charge trapping structure, allowing for non-volatile storage of the data. The device is composed of a 256K x 36 bits flash memory array and includes a set of RAM tests and controls, providing increased reliability and error detection capability.

The IS61LF25636A-7.5TQI provides access to data stored in the memory device through a Low Voltage Serial Peripheral Interface (LVS-SPI). This interface allows for higher transfer speeds of up to 10 MHz and supports multiple transaction types, such as read, write, and erase. The integrated circuit also includes three diagnostic registers, allowing for the verification of memory read and write operations, as well as the detection of error conditions. Additionally, the device includes a built-in analog-to-digital converter (ADC) for monitoring voltage and temperature.

In summary, the IS61LF25636A-7.5TQI is a high-density non-volatile 2 application specific integrated circuit (ASIC) memory device that is a 7.5-volt memory device composed of 256K x 36 bits of flash memory. It is typically used in embedded systems, automotive, medical, industrial, and hand-held applications. It offers a second-generation embedded flash memory at a maximum speed of 10 MHz, allowing for quick data read and write operations, as well as a set of power-saving modes for extended energy conservation. The memory device employs flash memory cell technology for non-volatile data storage, and features a Low Voltage Serial Peripheral Interface (LVS-SPI) for communication, along with three diagnostic registers for verifying memory read and write operations.

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