| Allicdata Part #: | IS61LF51236A-7.5B3LI-ND |
| Manufacturer Part#: |
IS61LF51236A-7.5B3LI |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ISSI, Integrated Silicon Solution Inc |
| Short Description: | IC SRAM 18M PARALLEL 165TFBGA |
| More Detail: | SRAM - Synchronous Memory IC 18Mb (512K x 36) Para... |
| DataSheet: | IS61LF51236A-7.5B3LI Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Synchronous |
| Memory Size: | 18Mb (512K x 36) |
| Clock Frequency: | 117MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 7.5ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3.135 V ~ 3.465 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 165-TBGA |
| Supplier Device Package: | 165-TFBGA (13x15) |
Description
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IS61LF51236A-7.5B3LI is a type of memory widely used in electronic devices, particularly in applications that require doubling the memory potential. It is based on a new architecture, in which the memory storage cells take up less space and the size of the bits can be adjusted. Memory cells are arranged in blocks, with the number of bits per cell assigned to meet specific requirements in each application. Additionally, each memory block can be set to allow for greater or lesser amounts of data to be stored.The main application of IS61LF51236A-7.5B3LI is in the development of high-end, user-friendly products and systems. This type of memory has the capacity to store large amounts of data, which is necessary for applications that require memory and efficiency at the same time. It also has integrated data buffers, making it much easier to switch between different memory applications.The IS61LF51236A-7.5B3LI consists of a large number of cells in each memory block, which each cell can store a maximum of 8 bits, although the total number of bits per memory block is configurable. Data can be written into the memory and read from it, given the correct address, within a customizable time window. The various addresses are arranged in a B-tree structure, which allows for fast access and processing of data.The hardware components used to build the IS61LF51236A-7.5B3LI include TTL logic gate arrays, NAND Flash memory, SRAM, EPROM and EEPROMs, and analog signal filtering and signal-conditioning components. All of these components are used to build the necessary circuits needed to control the specific data address and to read, write, and copy data in the IS61LF51236A-7.5B3LI memory array.The working principle of the IS61LF51236A-7.5B3LI can be divided into three main stages. First, the address range is determined by the application. Secondly, the memory is segmented block by block, each block being assigned with an address and data. Lastly, the data is loaded into the memory, where it is stored until needed.In conclusion, the IS61LF51236A-7.5B3LI is a type of memory designed to provide high capacity, efficient data storage. It has been built with modern components and technology, and its performance has been tested for the most common memory applications. By integrating its features with contemporary hardware products and systems, the IS61LF51236A-7.5B3LI can help create reliable and user-friendly systems that can maximize energy efficiency and reduce power consumption.
The specific data is subject to PDF, and the above content is for reference
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IS61LF51236A-7.5B3LI Datasheet/PDF