IS61LF51236B-6.5TQLI

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The IS61LF51236B-6.5TQLI is a high-reliability an asynchronous, 5-volt, 4M bit Static Random Access Memory (SRAM). This device is fabricated using an advanced CMOS process, and is packaged in a 44-pin diameter, or 48-pin small-outline integrated circuit (SOIC) package. It is designed for use in general-purpose memory and cache applications with wide temperature range, high speed micro-processors, DSUs, and host systems. These are customer supplied, nonvolatile memory devices that provide a robust, low power, low price solution for memory applications.

Application Field

The IS61LF51236B-6.5TQLI SRAM is used in a wide range of applications. These include but are not limited to: network routers, high-end telecom switches, computer server nodes, embedded applications in aerospace, automotive, and industrial automation systems, and high performance distributed DSU systems.

The IS61LF51236B-6.5TQLI SRAM is used in an UltraSPARC IIE with ECC as a main system memory. The SRAM is used as a primary memory in applications such as video on demand and real-time multi-media servers. It is well-suited to applications where low power consumption and robustness are important.

In addition, the IS61LF51236B-6.5TQLI SRAM is used in networking and communications applications, including voice packet switching, traffic regulation and routing. It can be used in next-generation DSL networks and integrated access networks. In addition, it is used in VOIP and IPTV applications.

Working Principle

The IS61LF51236B-6.5TQLI SRAM has a Static RAM (SRAM) memory cell that requires no refreshing. This means that data stored in the cell remains intact until new data is written into the SRAM memory cell. This is the main difference between the SRAM and Dynamic RAM (DRAM) cells. The SRAM memory cell works by using two transistors that cross-couple two bit lines, providing a high logic level at the intersection. The two transistors are, in essence, an logic memory cell.

The IS61LF51236B-6.5TQLI SRAM features a low-power, high-reliability design. The SRAM has a nominal power supply voltage of 5.0 V with a recommended maximum supply voltage of 5.5 V. It also features a low standby current of 750 uA and operates at speeds of up to 200 ns.

The IS61LF51236B-6.5TQLI SRAM features built-in auto-output disable features that can reduce the power consumption of the device. The auto-output disable feature requires that the input/output pins are held in an inactive state. The device will then automatically disable the output in order to reduce the power consumption of the device.

The IS61LF51236B-6.5TQLI SRAM is also capable of self-refreshing the memory. This allows the device to continuously read and write data without the need for host controller intervention.

The IS61LF51236B-6.5TQLI SRAM is designed to operate in a wide temperature range of -40°C to +85°C. This means that the device can be used in extreme temperature applications.

The IS61LF51236B-6.5TQLI SRAM can also be used in a multi-master system. This allows the device to switch between master and slave modes, allowing it to accept transactions from multiple sources. This can be used to increase the performance of the system.

The IS61LF51236B-6.5TQLI SRAM also features built-in error correction codes (ECC). The ECC offers important data protection for industrial and consumer applications that require reliable data storage and retrieval.

The IS61LF51236B-6.5TQLI SRAM is a low-cost, reliable, and power efficient memory solution for a wide range of applications. Its wide temperature range and high speed operation make it suitable for a variety of embedded and consumer applications. Its low power consumption and ECC support make it a cost-effective solution for mission-critical applications.

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