IS61LV12816L-10LQI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	2Mb (128K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3.135 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-LQFP
Supplier Device Package:	44-LQFP (10x10)

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Introduction of IS61LV12816L-10LQI

IS61LV12816L-10LQI is an Industry Standard Static Random-Access Memory (SRAM). It is designed to fulfill the requirements of high performance computational and data communications applications. It has a fast access time of only 10ns, making it suitable for high-speed operations. It is also compatible with the industry standard architecture, making it suitable for use in any system. The IS61LV12816L-10LQI also utilizes a low power design, making it ideal for implementation in mobile devices.

Application Fields of IS61LV12816L-10LQI

The IS61LV12816L-10LQI is a versatile static RAM device that can be used in a wide range of applications. It can be used in digital signal processing, embedded controllers, memory systems, and other applications. It is ideal for use in embedded devices, such as digital cameras, camera modules, printers, and disc drives. The embedded devices must have low power requirements and also require fast access times. The IS61LV12816L-10LQI is ideal for these types of applications.

Working Principle of IS61LV12816L-10LQI

The IS61LV12816L-10LQI follows the industry-standard static random-access memory (SRAM) architecture. The memory device consists of two components - the SRAM array, and the logic and control logic. The SRAM array is composed of a series of memory cells that store data. The size of the array is determined by the device. The total capacity of the memory device is determined by the size of the array.The logic and control logic is responsible for read and write operations on the memory device. The control logic generates the signals necessary to control the various operations of the SRAM array, such as reading and writing data, and providing control signals for operations. The logic and control logic are located on a separate die from the SRAM array, which allows for implementation of a single chip memory device.

Conclusion

The IS61LV12816L-10LQI is a versatile static random-access memory device that is suitable for many applications. It has a fast access time of only 10ns, and is compatible with the industry standard architecture. It can be used in a wide range of applications, such as digital signal processing, embedded controllers, memory systems, and other applications. The IS61LV12816L-10LQI has a low power design, making it ideal for embedded applications. The logic and control logic are located on a separate die, allowing for the implementation of a single chip memory device.

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