IS61LV25616AL-10T Allicdata Electronics
Allicdata Part #:

IS61LV25616AL-10T-ND

Manufacturer Part#:

IS61LV25616AL-10T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS61LV25616AL-10T datasheetIS61LV25616AL-10T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61LV25616AL-10T is a 64K x 16 CMOS Static RAM specifically designed for low-power, low-voltage + 3.3V operation. It is designed to offer an alternative to fast and or low-power SRAM solutions. The nonvolatile SRAM technology reduces power consumption and the accompanying packaging technologies reduce user power permitting wide dynamic range and a long battery life. This device is suitable for a variety of mainstream low-power applications, including embedded memory applications, portable devices, digital cameras, and many others.

Application Field

The IS61LV25616AL-10T offers several advantages. Power savings are realized by reducing the operating current, while allowing the device to wakeup quickly to a ready operating state. This device can also be used in multiple applications, such as:

  • Real-time clock/calendar
  • Portable medical instruments
  • Personal electronic devices
  • Portable gaming consoles
  • Fax and modem systems
  • Test and measurement instrumentation
  • Embedded systems

The IS61LV25616AL-10T also provides a low-power-consumption SoC solution that is suitable for battery-powered solutions, such as digital cameras and portable devices. This device is extremely reliable thanks to its high write endurance, providing extra levels of data retention.

Working Principle

The IS61LV25616AL-10T uses an innovative nonvolatile SRAM technology. It combines multiple advanced technologies including CMOS, Flash, and Supercapacitor, to provide an optimal low-power-consumption solution that requires no external components, such as capacitors or transistors. This reduces the total device cost and provides high levels of reliability.

The on-board supercapacitor is used as a backup power source in case of power failure. When power is lost, the flash process begins and the device will power down with the data stores safely stored in the Supercapacitor. Upon restoration of power, the device is fully functional within 1.2ms.

In addition, the IS61LV25616AL-10T supports self-refresh for low-power and low-power-loss solutions. When the device enters self-refresh mode, the current of the device and the whole system are minimized. Currently, the device can enter self-refreshing mode and restore to the normal data access mode within a few milliseconds.

The IS61LV25616AL-10T is also designed to retain data during unexpected power interruptions. It has a write endurance capability of up to 10,000 write cycles, promising longer device lifetime and higher reliability. Without the need to refresh, the device can maintain data integrity even after long periods of time.

The IS61LV25616AL-10T is an optimal solution for low-power and reliable storage applications. It meets the requirements of battery-powered and low-power solutions, with the advantages of low-power-consumption, fast wakeup times, high write endurance, and better data retention. With superior features, the device can be highly suited for embedded systems and many other applications.

The specific data is subject to PDF, and the above content is for reference

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