IS61LV6416-10T

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3.135 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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Introduction

The IS61LV6416-10T is an integrated memory chip made by Integrated Silicon Solution. It is a 10T (T stands for Technology) 5-Mbit static random access memory (SRAM). This type of memory is designed to provide quick, accessible storage, and can be used in a variety of applications, ranging from industrial and automotive to aerospace and medical. The IS61LV6416-10T is well-suited for applications that require fast data access and high data transfer rates, such as embedded systems, programmable logic controllers, imaging systems, and analytical instrumentation.

Application Field of IS61LV6416-10T

The IS61LV6416-10T is an ideal choice for a wide range of applications, due to its high storage capacity, low power consumption and fast data access. It can be used in industrial and automotive products, such as control systems, EMS systems, monitoring systems and more. Additionally, it can be used in medical imaging systems, test and measurement devices, aerospace and defense systems, and more.

Working Principle of IS61LV6416-10T

The IS61LV6416-10T is a static random access memory (SRAM) chip, meaning that it does not need to be periodically refreshed, as is the case with dynamic random access memory (DRAM) chips. This type of memory uses a cell structure which consists of four transistors and two capacitors. The cell structure allows for fast access and data transfer rates, since each cell has its own dedicated transistors, which allow the cell to charge, and the capacitors store the data.The memory is organized as a 5-Mbit memory array, organized as an array of 4096 words with 32 bits each. Data is stored and retrieved by sending an address to the chip, along with the desired operation. The read operation will return the data stored at the specified address, while the write operation will store new data at the specified address. This data access method allows the memory to provide random access, meaning that data can be stored and retrieved in any order.

Conclusion

The IS61LV6416-10T is an ideal memory chip for a wide range of applications, due to its high storage capacity, fast access and data transfer rates, and low power consumption. Its static random access memory (SRAM) architecture allows for fast data access, through the use of the cell structure which consists of four transistors and two capacitors. The IS61LV6416-10T can be used in a variety of applications, ranging from industrial and automotive to aerospace and medical.

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