IS61NLP25672-200B1 Allicdata Electronics
Allicdata Part #:

IS61NLP25672-200B1-ND

Manufacturer Part#:

IS61NLP25672-200B1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 209LFBGA
More Detail: SRAM - Synchronous Memory IC 18Mb (256K x 72) Para...
DataSheet: IS61NLP25672-200B1 datasheetIS61NLP25672-200B1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (256K x 72)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-LFBGA (14x22)
Description

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The IS61NLP25672-200B1 is a low power, high-density static RAM (SRAM) chip manufactured by Integrated Silicon Solution, Inc. (ISSI). It is designed specifically for applications where low power consumption, large capacity, and speed are all important. The IS61NLP25672-200B1 includes 8,192K bits of cycle time for a total of 1,024K words of 16 bits each which means that the chip is capable of storing up to 64 MB of data and can run at a fast access time of 1.2 ns. In addition, the chip is capable of operating at a clock speed of up to 100 MHz.

This type of memory is most commonly used in data storage and retrieval applications where fast access time is essential. The IS61NLP25672-200B1 is the perfect choice for a variety of embedded designs, including LANs, remote sensing systems, industrial automation, data logging, intelligent instrumentation, automotive applications and more. The chip also offers a number of specialized features, such as an eight-bit programmable SEEPROM, which allows users to store a variety of settings, as well as an enhanced diagnostic mode that simplifies device testing and verification.

The working principle of the IS61NLP25672-200B1 revolves around its static RAM cells. A static RAM cell consists of a single transistor and a single capacitor, which allows for its extremely fast access time. Data is stored in the RAM cell as either a 1 or 0 bit. In this type of memory, data is stored in the cell until it is either replaced or discharged from the capacitor.

To read data from the IS61NLP25672-200B1, a voltage spike is sent to the RAM cell and the data is read from the cell. To write data, the previous contents of the RAM cell must first be erased, and then a suitable voltage is applied to the RAM cell to write the new data. The process of writing and reading data is quick and easy, and provides efficient data storage and retrieval.

The IS61NLP25672-200B1 is an important tool in many applications where fast data access is essential. Its fast access time, low power consumption, and large capacity make it an excellent choice for embedded design projects. The chip also offers an enhanced diagnostic mode and an eight-bit programmable SEEPROM for added convenience and features.

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