IS61NLP51236-200B3LI-TR Allicdata Electronics
Allicdata Part #:

IS61NLP51236-200B3LI-TR-ND

Manufacturer Part#:

IS61NLP51236-200B3LI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61NLP51236-200B3LI-TR datasheetIS61NLP51236-200B3LI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TFBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

So you\'re interested in what IS61NLP51236-200B3LI-TR is, and how it works when used in memory applications. This article will give you an overview of the product and its working principle.

Product Overview

The 360o view Characteristics of IS61NLP51236 consists of a series of 8-bit high-speed static RAM (HSRAM) integrated circuits (integrated circuits) that can be used in both parallel and serial memory applications. Their features include paged access as well as programmable read/write enable and many other features. The IS61NLP51236 also has low voltage operation capability, making it an ideal choice for battery backed and low power applications.

Application Fields

The versatile features of IS61NLP51236 make it suitable for a broad range of applications. It is primarily used in applications where low power and non-volatile operation are essential, such as communications systems, memory expansion, and data analysis. This product is also suitable for portable devices such as PDAs, cellular phones, and digital cameras since it has low power consumption. Furthermore, its sub-micron architecture, makes it ideal for use in embedded systems and systems with high-speed memory requirements.

Working Principle

IS61NLP51236-200B3LI-TR operates according to a static random access memory (SRAM) architecture. This is where a number of memory cells, also known as RAM (Random Access Memory), are placed in an array in order to store data. This data can then be read or written to by sending an address to the chip, telling it which cell to read or write. The data is then transferred from the RAM cell to the data register for the read or write operation.

The IS61NLP51236-200B3LI-TR uses a synchronized paged read/write architecture. The page size is a fixed number of memory cells, usually 128 or 256, which are grouped together and can be read or written at the same time by sending the address of the starting cell. This makes the operation more efficient than reading or writing each cell individually.

Conclusion

In this article, we discussed the IS61NLP51236-200B3LI-TR and its applications. We highlighted the fact that IS61NLP51236-200B3LI-TR is suitable for low power and non-volatile applications due to its low voltage operation capability. We also discussed the working principle of IS61NLP51236-200B3LI-TR, which is based-on SRAM architecture and a paged read/write architecture. This versatile product can play an important role in many different kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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