IS61QDB21M36C-250M3

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Memory

The IS61QDB21M36C-250M3 memory is one of the most commonly used in the current market. It is a Dual Bank Dual Port SRAM Memory that provides a high-performance SRAM with a low power consumption. The memory is ideal for applications requiring high-performance and low-voltage operations.

Application Field

The IS61QDB21M36C-250M3 memory is commonly used in a variety of applications. These include embedded systems such as embedded videogames, PDAs, system-on-a-chip (SoC) designs, and digital signal processing (DSP). The memory is also used in critical applications such as telecommunications network systems, automotive navigation systems, industrial control systems, and military applications.

The IS61QDB21M36C-250M3 memory also has a variety of features that make it a desirable memory solution. It has a dual-bank design that provides multiple banks of single-ported SRAM. It also has a wide range of working voltage ranges – from 1.8V to 10V – that makes it suitable for a wide range of applications. The memory also has an synchronous burst flow-through mode, which enables it to provide performance far beyond the traditional asynchronous SRAM.

Working Principle

The IS61QDB21M36C-250M3 memory uses a dual-bank architecture to provide maximum performance and flexibility. The memory consists of two independent ports, each with its own controller and complete set of registers. Each port supports separate program, data and address bus operations. The two ports can be accessed simultaneously, allowing for high-performance data manipulation.

The IS61QDB21M36C-250M3 memory uses a synchronous burst read and write operation, allowing data to be written and read quickly. It also features burst lengths of up to 8 words, allowing data to be read quickly without incurring read delays. The memory also supports address and data masks, allowing data to be read in a specified order.

The memory has programmable memory protection, allowing it to be protected from unauthorized access and control. The memory also features a low-power operation, allowing it to be used in a variety of mobile and embedded applications. Finally, the memory has an on-chip self-test mode, allowing the system to perform a routine test of the memory with minimal disruption.

The IS61QDB21M36C-250M3 memory provides the ultimate solution for customers who want high-performance and low-voltage operations for their embedded systems. With its wide range of features and capabilities, it is the ideal choice for a variety of applications.

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