IS61QDB22M18C-250M3 Allicdata Electronics
Allicdata Part #:

IS61QDB22M18C-250M3-ND

Manufacturer Part#:

IS61QDB22M18C-250M3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 36M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) ...
DataSheet: IS61QDB22M18C-250M3 datasheetIS61QDB22M18C-250M3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 8.4ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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IS61QDB22M18C-250M3 are primarily used for applications in the memory sector. As a core technology in memory, memory plays an important role in modern computer systems, and the technology of IS61QDB22M18C-250M3 is one of the most advanced and powerful solutions available. It can store data up to 250Mb in a single chip.IS61QDB22M18C-250M3 uses a highly advanced and efficient synchronous dynamic random access memory technology, also known as SDRAM, to store information. This powerful technology provides sustainability and reliability of the data stored. SDRAM is composed of two large groups: row memory and column memory. The row cycle time is shorter, while the column cycle time is longer. The SDRAM technology adopted by IS61QDB22M18C-250M3 is a double data rate technique, which enables the chip to read and write up to two words of data in a single clock cycle. This double data rate technique maximizes efficiency by reducing the numbers of clock cycles it takes to write a single word of data. Furthermore, the IS61QDB22M18C-250M3 uses a split bank feature, which allows for a read data request to begin at the same time as a write data request is being handled. This makes memory accesses much faster and therefore boosts the overall performance of the device.The IS61QDB22M18C-250M3 also uses a structure of 256-word double data rate arrays, which are capable of handling read and write operations simultaneously. Furthermore, it utilizes separate impedance calibration, write re-timing, portion decoding and data multiplexing in order to achieve optimal system performance.One of the key features of the IS61QDB22M18C-250M3 is its low power consumption. This is achieved by using low voltage and operating current. Since only a very small amount of power is necessary, less heat will be dissipated, resulting in a cooler and more efficient system.Overall, IS61QDB22M18C-250M3 is an efficient, reliable and sustainable memory solution that can be used in various applications. With its powerful SDRAM technology, low power consumption and double data rate arrays, the IS61QDB22M18C-250M3 is an ideal choice for high-performance memory systems.

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