![IS61QDB22M18C-250M3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IS61QDB22M18C-250M3-ND |
Manufacturer Part#: |
IS61QDB22M18C-250M3 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 36M PARALLEL 165LFBGA |
More Detail: | SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QUAD |
Memory Size: | 36Mb (2M x 18) |
Clock Frequency: | 250MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 8.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.71 V ~ 1.89 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-LFBGA (15x17) |
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IS61QDB22M18C-250M3 are primarily used for applications in the memory sector. As a core technology in memory, memory plays an important role in modern computer systems, and the technology of IS61QDB22M18C-250M3 is one of the most advanced and powerful solutions available. It can store data up to 250Mb in a single chip.IS61QDB22M18C-250M3 uses a highly advanced and efficient synchronous dynamic random access memory technology, also known as SDRAM, to store information. This powerful technology provides sustainability and reliability of the data stored. SDRAM is composed of two large groups: row memory and column memory. The row cycle time is shorter, while the column cycle time is longer. The SDRAM technology adopted by IS61QDB22M18C-250M3 is a double data rate technique, which enables the chip to read and write up to two words of data in a single clock cycle. This double data rate technique maximizes efficiency by reducing the numbers of clock cycles it takes to write a single word of data. Furthermore, the IS61QDB22M18C-250M3 uses a split bank feature, which allows for a read data request to begin at the same time as a write data request is being handled. This makes memory accesses much faster and therefore boosts the overall performance of the device.The IS61QDB22M18C-250M3 also uses a structure of 256-word double data rate arrays, which are capable of handling read and write operations simultaneously. Furthermore, it utilizes separate impedance calibration, write re-timing, portion decoding and data multiplexing in order to achieve optimal system performance.One of the key features of the IS61QDB22M18C-250M3 is its low power consumption. This is achieved by using low voltage and operating current. Since only a very small amount of power is necessary, less heat will be dissipated, resulting in a cooler and more efficient system.Overall, IS61QDB22M18C-250M3 is an efficient, reliable and sustainable memory solution that can be used in various applications. With its powerful SDRAM technology, low power consumption and double data rate arrays, the IS61QDB22M18C-250M3 is an ideal choice for high-performance memory systems.
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