IS61QDB42M18-250M3 Allicdata Electronics
Allicdata Part #:

IS61QDB42M18-250M3-ND

Manufacturer Part#:

IS61QDB42M18-250M3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 36M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) ...
DataSheet: IS61QDB42M18-250M3 datasheetIS61QDB42M18-250M3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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IS61QDB42M18-250M3 is a type of memory, and it is widely used in various industrial applications. It is a low cost, high density memory device that provides an increased level of flexibility and scalability. This type of memory is suitable for applications that require high speed access to a large amount of data, but requires less access time, power, and space than SDRAM or DRAM.

The IS61QDB42M18-250M3 features a 512-bit wide DDR-I/O interface, allowing for up to 1024 bits of data transfer per address. The device also features an additional 8KB of fast boot memory, which allows for quick initialization, and a Program Counter Interrupt (PCI) controller, which allows for higher performance algorithms. This memory device also supports multiple bus types, including the popular Micro-DIMM interface.

IS61QDB42M18-250M3 memory devices employ a wide variety of input and output options, including ESD protection, clock synchronization, and error correction. In addition, the device features a Error Correcting Code (ECC) mechanism, which allows for corrections of corrupted data without interrupting operations. The device also incorporates a power control circuitry, which allows for efficient power management.

The working principle of the IS61QDB42M18-250M3 memory device is based on the concept of DRAM. DRAM, or Dynamic Random Access Memory, is a type of computer memory that stores data in an array of cells, which are organized in memory banks. The data is stored in cells and the process of retrieving it is done by addressing the correct memory bank and memory location. The IS61QDB42M18-250M3 utilizes this technology to store data in a highly efficient and space efficient manner.

In addition to its capacity, the IS61QDB42M18-250M3 memory device also features a high level of flexibility and scalability. This allows users to customize their memory settings based on the specific needs of their application. The device is also capable of operating in multiple clock speeds, allowing for efficient performance and data transfer.

The IS61QDB42M18-250M3 memory device is commonly used in applications such as digital picture frames, multimedia applications, and embedded systems. It provides a cost effective, high density solution for a wide variety of industries, including medical, automobile, oil and gas, and aerospace. With its robust and reliable design, the IS61QDB42M18-250M3 memory device is an ideal choice for large scale applications.

The specific data is subject to PDF, and the above content is for reference

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