IS61C6416AL-12KI-TR

Memory

The IS61C6416AL-12KI-TR is a non-volatile, electrically erasable and programmable memory device designed to provide high-speed random access memory. It is a 16Kbit static random access memory (SRAM) with an asynchronous interface.

The IS61C6416AL-12KI-TR has an array of 16K bits of non-volatile memory arranged in a 64x256 array. Each cell of the array is a 12-bit bit-slice that can be read or written at the same time. The device can be accessed from the external interface using 4-bit or 8-bit buses. Data is organized in a block or page format, and is addressable using either 11-bit or 12-bit addressing. The device supports byte or page programming, with speeds up to 60ns for byte or page programming operations.

Application Field

The IS61C6416AL-12KI-TR can be used in a variety of applications including data storage, digital media storage, embedded control, automotive and industrial systems, electronic design automation, and instrumentation and process control.

The IS61C6416AL-12KI-TR can be used to store data in a secure, non-volatile location, or to store code in a non-volatile memory. In addition, the device\'s non-volatile nature makes it ideal for applications requiring long-term data storage.

The device\'s speed and flexibility make it a suitable choice for embedded systems in automotive and industrial applications, where speed and flexibility are critical. The device can also be used in instrumentation and process control, where its fast write cycle time and data retention capabilities can be invaluable. The device is also suitable for use in electronic design automation, where its low power consumption and non-volatile nature make it a good choice for memory usage.

Working Principle

The IS61C6416AL-12KI-TR uses a static random access memory (SRAM) that is organized into a 64x256 array. Each cell of the array is a 12-bit bit-slice that can be read or written at the same time. The device can be accessed from the external interface using 4-bit or 8-bit buses. Data is organized in a block or page format, and is addressable using either 11-bit or 12-bit addressing.

The device can be programmed using 4-bit or 8-bit buses, with a byte programming cycle time of 60ns. The device provides a Reset (RST) signal that must be asserted prior to any programming or initializing of the device. The device also features an auto-increment control signal that can be used to increment the current memory address automatically after each read or write operation.

The device supports three internal refresh modes that can be selected. The refresh modes are a refresh cycle mode, a self refresh mode and a hidden refresh mode. In the refresh cycle mode, the device performs internal refresh cycles periodically based on the refresh frequency rate set in the device configuration. In the self refresh mode, the device refreshes the contents of the memory by cycling through the entire memory array periodically. In the hidden refresh mode, the device refreshes the data in the memory array when the current address matches a “trigger address” that is configured in the device.

The device also features an industry-standard parallel I/O interface. The interface consists of four read and write control signals that allow for efficient data transfer between the device and an external bus. The I/O interface also features a global reset signal that is sent to the device when the reset signal is asserted.

The IS61C6416AL-12KI-TR is a highly efficient, non-volatile, electrically erasable and programmable memory device suitable for a variety of applications. Its fast programming times and low power consumption make it an attractive choice for embedded systems and electronic design automation.