IS61LPS102418A-200TQ

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IS61LPS102418A-200TQ Memory

IS61LPS102418A-200TQ is an integrated static RAM designed for a variety of memory applications, including data storage, instruction memory, and ROM emulation. This device is an 8Kx18 bit static RAM, organized as 417 rows and 512 columns. The device is able to access data on the first rising edge of the address following the assertion of chip select (CE). Data will remain stable until the address input changes.

The part is built with a 0.45um process technology and is further enhanced with advanced static RAM features. It includes high current drivers that allow large fan-out capability and drive a minimum of 10K gates, single-supply/dual-supply operation and improved moisture sensitivity level of 1. The device features an Advanced Low Voltage Detect (ALVD) circuit, fast access times of 1, 2, and 3 clocks and simple peripheral logic. IS61LPS102418A-200TQ is available in a variety of packages, including TSOP, TSSOP, and Plastic Memory Package (PMP).

IS61LPS102418A-200TQ Application Field

IS61LPS102418A-200TQ device is primarily used in applications that require large amounts of frequently accessed data, such as automated test equipment, counter/timers, system controllers, and data acquisition systems. The device also finds use in memory-dump applications. The IS61LPS102418A-200TQ is widely used in general purpose static RAM applications such as personal computers, measurement and test equipment, instrumentation, industrial control systems, and automotive systems.

The device offers high speed operation and low power consumption, making it suitable for use in battery-powered systems. In addition, the device features an Advanced Low Voltage Detect (ALVD) circuit which allows quick detection of low voltage supply and serves as a battery monitor.

IS61LPS102418A-200TQ Working Principle

IS61LPS102418A-200TQ uses a static RAM cell comprised of 4 transistors (this is also known a 4T cell). Each RAM bit of the device is connected to a corresponding 4T cell. The 4T cell is connected to four wires – two for address and two for data. The data pins are connected to the RAM bit and the address is connected to the word line and bit line of the RAM array.

When a write operation is performed, a write enable signal is issued and the selected RAM bit’s data lines are connected to the R/W (read/write) line. This causes the 4T cell to be connected to the write enable and data is stored in the RAM bit. When a read operation is performed the RAM bit’s data lines are connected to the R/W line. This causes the 4T cell to be connected to the read enable and data is read from the RAM bit.

IS61LPS102418A-200TQ’s single-supply/dual-supply operation allows it to be used in a wide variety of applications. In single-supply operation the device operates on a single voltage and can drive loads or be used as a memory buffer. In dual-supply operation the device operates on two distinct voltages and can be used as a memory buffer or used to store data.

The device also features an Advanced Low Voltage Detect (ALVD) circuit for quick detection of low voltage supply. This feature serves as a battery monitor, ensuring efficient and reliable operation.

IS61LPS102418A-200TQ is a high-performance, low-power integrated static RAM which delivers superior performance, reliability and value. The device’s features include fast and efficient access times, high current drivers, single-supply/dual-supply operation and improved moisture sensitivity level of 1. In addition, the device features an Advanced Low Voltage Detect (ALVD) circuit for quick detection of low voltage supply and serves as a battery monitor, ensuring efficient and reliable operation.

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