IS61QDB42M18A-333M3I Allicdata Electronics
Allicdata Part #:

IS61QDB42M18A-333M3I-ND

Manufacturer Part#:

IS61QDB42M18A-333M3I

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 36M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) ...
DataSheet: IS61QDB42M18A-333M3I datasheetIS61QDB42M18A-333M3I Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Access Time: 8.4ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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IS61QDB42M18A-333M3I is a non-volatile memory that belongs to the family of asynchronous SRAMs. The device is designed to provide enhanced performance, data security, and low power operation.

The IS61QDB42M18A-333M3I is a highly reliable and low-power memory solution that is used in many applications including instrumentation, medical, automotive and industrial control. The device is designed to provide storage solutions that support both internal and external data protection mechanisms.

The IS61QDB42M18A-333M3I is a synchronous dual-port SRAM that has an asynchronous interface for direct connection to the system bus. It includes two banks of 4M x18 synchronous DRAMs connected to two sets of registers that provide the independent read and write accesses as well as the multiplexed address and data swapping. Both banks are buffered and the memory is organized in 8-bit data word. The device requires only a single +3.3V power supply for operation.

The IS61QDB42M18A-333M3I has a variety of features designed to improve and enhance data security. It has multiple internal ECC bits, and supports automatic parity checks, CRC and preprogrammable write protect capability. It also has a full complement of security features including user defined passwords and passwords, internal alarm and power-on reset protection. The device also supports both 8-bit and 16-bit flash operations.

In terms of working principle the IS61QDB42M18A-333M3I is an asynchronous SRAM device with a synchronous dual-port interface. The device uses a dual 16-bit port to access and read or write data from or to the memory. It uses an internal address register to process and complete memory transactions. When the address register is changed the data previously stored at that address is read out while a new data is written into the port. This allows the device to keep all the data synchronized.

The IS61QDB42M18A-333M3I also supports burst and page read and write operations. It also provides an auto pre-charge feature that can reduce the latency period of the write cycle. The device is a low-power and highly reliable solution for a variety of applications.

Overall the IS61QDB42M18A-333M3I series is an ideal solution for a memory that requires enhanced performance, data security, and low power operation. It is widely used in instrumentation, medical, automotive and industrial control applications. It offers a wide range of advantages such as automatic parity checks, CRCs, preprogrammable write protect capability, and multiple internal ECC bits. This makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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