IS61QDB42M18C-333M3I

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The IS61QDB42M18C-333M3I is a static random access memory (SRAM) device classified under the memory type. It is manufactured by Integrated Silicon Solution Inc. (ISSI). SRAM is a type of semiconductor device that is volatile, meaning it needs constant power supply to function and any data stored in it will be lost in the event of power loss.

The IS61QDB42M18C-333M3I operates with a 4.2V to 4.5V (nominal) power supply. Its features include 133 MHz random cycle time and a write operation time of up to 20ns. Its storage capacity is 256Kbits, with a size of 32M by 8bits. It is available in a 18 pin SOJ, 20 Pin SOJ, and 24 pin TSOP packages.

The IS61QDB42M18C-333M3I can be used for a variety of applications, such as networking and communications, automotive systems, industrial and commercial applications, and medical devices. It is also popularly used in gaming systems, digital audio and video equipment, and digital cameras.

The working principle of the IS61QDB42M18C-333M3I is quite simple. It stores the data in SRAM cells, which are made up of transistors and capacitors. When power is applied, a digital signal is stored in the cell. The data remains stored in the cell until power is removed. The data can be modified when needed by sending a digital signal to the SRAM cell through the appropriate pins.

The IS61QDB42M18C-333M3I is designed to offer reliable, high performance memory solutions, as it has low power consumption, wide access times and refresh cycles, as well as high data integrity. It is also built to be very reliable, with excellent data retention and data-read stability even under high temperature conditions.

In conclusion, the IS61QDB42M18C-333M3I is a static random access memory device which is commonly used for a variety of applications thanks to its reliable performance, low power consumption, and wide access times. Its working principle is quite simple, where data is stored in SRAM cells and can be modified when needed by sending a digital signal through the appropriate pins.

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