IS61QDPB42M18A-400M3L

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Memory occupies an important part in computer system. IS61QDPB42M18A-400M3L is a kind of computer memory that integrates function and structure, and its application field and working principle is worth a deeper research.

Application Field for IS61QDPB42M18A-400M3L

IS61QDPB42M18A-400M3L is a kind of dynamic random access memory (DRAM) with semiconductor storage that also has other names such as single access memory and dynamic access memory. Generally, it is used in personal computers, or embedded electronic products that need large capacity. IS61QDPB42M18A-400M3L has become an important component to build the memories in computer systems of the latest generation. It is an ideal choice for demand with high speed, low power-consumption, multiple operating frequency, large capacity and excellent stability.

IS61QDPB42M18A-400M3L also has a wide application as speciality tool for industrial concern usage. It is applied in PCMCIA (Personal Computer Memory Card International Association) that supports transmission speed at 100MHz and interfaces between peripherals, especially in autos control and CI (Custumize Information) Systems. In addition, IS61QDPB42M18A-400M3L is widely used in life science equipment and medical systems.

Above is the application field for IS61QDPB42M18A-400M3L. This high-quality component not only enables to produce powerful machine with high performance but also meets the design requirements of industrial customers.

Working Principle of IS61QDPB42M18A-400M3L

The working principle for IS61QDPB42M18A-400M3L is introduced as followings. There are two devices, which are transistor and capacitor, comzomboined to form this DRAM. The devices are integrated with special techniques that enable to store one-bit information in the form of charge. Consequently, the stored information can be retrieved when prescribed voltage is impressed to the transistor. The working principle of IS61QDPB42M18A-400M3L can be divided into three steps.

Read operation

In read operation, firstly, switches are opened by a signal of active low and the data line is placed in a drowsy state. Consequently, the internal voltages of transistor that is connected with data line increase. Subsequently, current flows through the transistors and the information stored in the capacitor is read into the selected line. Finally, by a cycle of signal of active low is combined with the data line, the voltages of transistors return to 0V. Then, the process of reading operation is completed.

Write operation

In write operation, there are also three steps. The first step is the same as read operation. Subsequently, the transistors transfer the imposed information from control line to the capacitor by opening switches. In this process, the imposed information is separated from the selected line and is placed in the capacitor. Finally, the voltage of the transistors is returned to 0V.

Refresh operation

When performing read and write operations, refresh operation is necessary, too. Refresh operation is necessary to prevent the stored information in capacitor from losing. To achieve this, the refresh circuit in DRAM is included in control circuit chip, and the control circuit will control the selection of row or column, then supply the voltage to the capacitor until the voltage reaches a certain level so that the reset time will occur.

The working principle of IS61QDPB42M18A-400M3L is not complicated and is quite easy to understand. Hence, normal people can clearly comprehend the working principle of IS61QDPB42M18A-400M3L memory.

In conclusion, IS61QDPB42M18A-400M3L is a dynamic random access memory (DRAM) with semiconductor storage and it has become an important component of the latest computer systems. It has a wide application for personal computers, PCMCIA, autos control, CI systems and so on. Moreover, its working principle include three steps of read operation, write operation and refresh operation.

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