IS61WV51216EEBLL-10T2LI-TR Allicdata Electronics
Allicdata Part #:

IS61WV51216EEBLL-10T2LI-TR-ND

Manufacturer Part#:

IS61WV51216EEBLL-10T2LI-TR

Price: $ 6.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 8M PARALLEL 48TSOP I
More Detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Para...
DataSheet: IS61WV51216EEBLL-10T2LI-TR datasheetIS61WV51216EEBLL-10T2LI-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 5.79275
Stock 1000Can Ship Immediately
$ 6.37
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory

The IS61WV51216EEBLL-10T2LI-TR is a CMOS Static Random Access Memory (SRAM) manufactured by ISSI. SRAM is a type of high speed memory that combines fast access speeds with high reliability. The IS61WV51216EEBLL-10T2LI-TR is a component that is widely used in a variety of applications such as medical instrumentation, robotics, automation, high-speed switching, and data acquisition.

The IS61WV51216EEBLL-10T2LI-TR has a 512K x 16 bit organization, which is capable of storing 8 million data bits. It features an industry-standard 3.3V power supply, and has a single-clock design for reduced power consumption. The device can operate at a maximum speed of 66 MHz, and is optimized for fast cycle time and low power operation. The device is also available with various package options, such as 16-pin SOIC, 20-pin SSOP, and 24-pin PLCC.

The IS61WV51216EEBLL-10T2LI-TR is a synchronous SRAM, which means that its operation is synchronized to a clock signal. This allows for faster data retrieval times, as data can be clocked in from different memory locations in the same clock cycle. The device also features two independent chip select inputs, which allows multiple devices to be connected to the same address and data buses.

The IS61WV51216EEBLL-10T2LI-TR supports both Byte (8-bit) and Word (16-bit) reads and writes. It features adjustable output drive strengths and multiplexed timing parameters for both read and write cycles. The device can be set to operate in either page mode or burst mode, depending on the application. In page mode, the device operates in a single row of data, while in burst mode, the device can access multiple rows of data in a single read or write cycle. This allows for fast data access and improved memory efficiency.

The IS61WV51216EEBLL-10T2LI-TR also features an integrated on-chip VCC Monitoring circuit which is capable of detecting and signalling power failure conditions. This feature is useful for applications which require power backup in order to maintain data integrity. The device also has an integrated on-board temperature sensor which can measure the temperature of the environment in which it is being used. This feature is useful for applications that require precise temperature control in order to maintain performance.

In summary, the IS61WV51216EEBLL-10T2LI-TR is an excellent choice for applications that require a high-speed, reliable and power efficient memory component. The device has a wide range of capabilities and features, making it well-suited for many different types of applications. From medical instrumentation to robotics, the IS61WV51216EEBLL-10T2LI-TR is a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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