IS63LV1024L-10HL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package:	32-sTSOP I

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Introduction of IS63LV1024L-10HL-TR

Memory has been used for centuries, and one of the mainstream types today is Static Random Access Memory (SRAM). IS63LV1024L-10HL-TR is one of the examples of SRAM and is regularly used in inventions or systems, such as laptops, mobile phones, digital cameras, and even in mission critical systems. IS63LV1024L-10HL-TR comes with the features of ultra-low power and fast access time, allowing it to be used flexibly in a variety of applications.

Application Field of IS63LV1024L-10HL-TR

IS63LV1024L-10HL-TR is mainly used in products involving power control or energy management. It is typically applied as a cache memory or buffer memory for temporary data storage and rapid access. In personal electronic devices such as laptops, mobile phones, digital cameras and so on, IS63LV1024L-10HL-TR can be used for application program storage or buffered data, and the power savings can be up to 40%. In mission critical systems such as telecommunications, military or space applications, the low power consumption and fast access time of IS63LV1024L-10HL-TR, as well as its wide operation temperature range, enables it to be used in high performance but power-constrained applications.

Working Principle of IS63LV1024L-10HL-TR

IS63LV1024L-10HL-TR works like a regular SRAM, unless it is configured to its lowest power consumption state. It is mainly composed of two parts, the NOR gates and cross coupled inverters. To access data, when the Word Line (WL) is activated, the logic high signal is passed to the memory cell. This is known as read. To store the data, the logic signal is inverted and the opposite logic level is then stored in the memory cell. This is known as write. Because of the unique advantages it provides, IS63LV1024L-10HL-TR further reduces the static current consumption by using low power mode which can be controlled by the Energy Detect Mode Pin (EDM). When the EDM pin is in the active low state, the static power consumption can be reduced significantly. The EDM pin has the threshold voltage at VDD=2.5V and it is hysteresis compatible. Moreover, the EDM pin must be float for optimum operation.

Conclusion

IS63LV1024L-10HL-TR is a low power static random access memory, perfect for applications requiring low static power. It provides low current consumption, fast access time, wide operating temperature ranges and flexibility to operate as a normal static random access memory or in its lowest power consumption mode. It is an ideal solution for personal electronic devices, or mission critical systems.

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