IS63WV1288DBLL-10HLI-TR Allicdata Electronics
Allicdata Part #:

IS63WV1288DBLL-10HLI-TR-ND

Manufacturer Part#:

IS63WV1288DBLL-10HLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: IS63WV1288DBLL-10HLI-TR datasheetIS63WV1288DBLL-10HLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I
Description

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IS63WV1288DBLL-10HLI-TR is a 1Mb CMOS static RAM with low power operation. It is widely used in applications, such as data caching memories, code storage programs, system level memories, and control memories. This device utilizes an array of 8192 words by 16 bits to deliver a maximum density of 1Mb.

This memory device operates at 3V, a low voltage power which provides higher operating speed while still consuming low current. The IS63WV1288DBLL-10HLI-TR employs a redesigned sense amplifier (SA) architecture, allowing reduced operating current and improved noise margin over other products on the market. It also features a fast random access time at 25ns with an active cycle of 180ns.

The IS63WV1288DBLL-10HLI-TR offers advanced features that allow it to accept two distinct address sources, each with separate enable and data inputs and outputs. This feature allows multiple external memory accesses and multiplexing of internal address and control signals. The device also incorporates a high-performance write-protect circuit, which is activated when a low voltage is applied to the write protect pin and improves the data write performance by eliminating conflicts between data inputs and outputs.

The IS63WV1288DBLL-10HLI-TR also offers enhanced ECC protection that is not available in other memory devices. The built-in error-correcting code (ECC) allows the device to detect errors and correct them. The device also features an on-chip refresh circuit, allowing refresh cycles of up to 500ns. This feature ensures that the device can remain in an active state, even if the system remains in a suspended state.

In order to increase performance and reduce noise, the IS63WV1288DBLL-10HLI-TR employs a dual-bus architecture. This feature allows the device to write data in parallel and read data in two different clock phases, thus boosting access speed and reducing noise. The device also includes a write buffer and a cycle dependent initialization logic to ensure data integrity.

The IS63WV1288DBLL-10HLI-TR is an excellent choice for a variety of applications, such as data caching memories, system memories, and code storage programs. With its low operating power, fast random access time, dual address sources, enhanced ECC protection and dual-bus architecture, the IS63WV1288DBLL-10HLI-TR is an ideal memory device to use in these applications.

The specific data is subject to PDF, and the above content is for reference

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