IS63LV1024L-12H Allicdata Electronics
Allicdata Part #:

IS63LV1024L-12H-ND

Manufacturer Part#:

IS63LV1024L-12H

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 32STSOP I
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: IS63LV1024L-12H datasheetIS63LV1024L-12H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I
Description

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The IS63LV1024L-12H is a 1M Burst Erase/Program device, which is made up of 1024K x 8 bits CMOS FLASH memory. It is a static RAM organized as a 131,072 words by 8 bits per word. The IS63LV1024L-12H is ideally suited for applications requiring single-voltage power supply operation. It is suitable for computers, peripherals, data transmission, data storage, networking and other electronic system applications.

IS63LV1024L-12H applies to program and erase operations for FLASH memory. It uses the absolute highest-density memory for a single memory cell and is the smallest, highest-performance member of the 1M Burst Erase/Program device family. It is designed for applications such as removable storage, portable electronics, embedded systems, and instrumentation. IS63LV1024L-12H offers a robust programming/erase cycle and data retention of more than 10 years. High performance and reliable operation are assured by the proprietary automatic wear leveling and Bad Block Management.

The IS63LV1024L-12H works with a single front end control line and a single ground line. Inputs and outputs can be modified through a 4-pin IC interface. It has an ultra-low power consumption and a high endurance of 1,000,000 program/erase cycles. High integration can be achieved with IS63LV1024L-12H, including program/erase, program and password protection, page write Page Mode, and other advanced FLASH memory features.

The working principle of IS63LV1024L-12H is very simple. It consists of a controller and memory array. The controller will identify and send the address of the memory array from the address pins and along with that, the write data or read data from the data pins are transferred. The command pins are used to differentiate if the operation is for read or for write data. If it detects the write command, it will store the data in the memory address which is provided by the controller. As the communication is bi-directional, the same pins are used for reading the data also.

To conclude, IS63LV1024L-12H is an ideal static RAM suitable for computers, peripherals, data transmission, data storage, networking, and other electronic system applications. It is designed to provide superior performance with low power consumption. The device features an integrated controller, and offers an ultra-low power consumption and a high endurance of 1,000,000 program/erase cycles. The working principle of IS63LV1024L-12H is very simple and consists of a controller and memory array.

The specific data is subject to PDF, and the above content is for reference

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