IS63LV1024L-12BI

SRAM (Static Random Access Memory) is a type of semiconductor memory which uses a pair of complementary metal-oxide-semiconductor (CMOS) transistors to store one bit of information. The IS63LV1024L-12BI is a low power SRAM integrated circuit designed by ISSI. It offers 128K-bit of memory, organized as 2K x 64 bits. It is a dual voltage part with a power supply voltage of either 1.8V or 3.3V.

The IS63LV1024L-12BI is used in a range of applications such as automotive, cellular phones, security systems, networking, as well as general-purpose embedded systems. It is also suitable for retrieving data from EPROMs or FIFO memories and buffering data in communications systems or airline processing systems. The IS63LV1024L-12BI can also be used to connect microprocessors to larger memories.

The IS63LV1024L-12BI is a low power SRAM that differs from traditional SRAM in various ways. Traditional SRAMs require large capacitors and resistors to achieve power stability, but this device only uses transistors to achieve power stability. Additionally, the device is designed to reduce power consumption by dynamically entering and exiting low power standby modes. These standby modes allow the SRAM to enter a reduced power state whenever there is no activity detected on the device.

The IS63LV1024L-12BI has an asynchronous 256-word by 64-bit organization and features a wide variety of features.The device is configured with a three-state output enable pin (OEP) which allows users to easily interface the device to microcontrollers or bus drivers. The device also features a design which prevents data corruption under power supply transients, making it more reliable for systems with high MTBF requirements. Furthermore, the device includes a 8K-bit write mode register and write mode enable pin (WR) which allows users to configure the device for various memory and timing functions. Furthermore, pull-up resistors are integrated on the address pins and WEB and WEL pins to support open-drain ICs.

The IS63LV1024L-12BI also has an excellent power-down function, which allows users to place the device in a low power state by simply deactivating the power. This feature is especially useful when large banks of memory need to be accessed quickly and often. In addition, the device is designed to have low propagation delays and high-speed access time. This allows the device to read and write data quickly, reducing the overall time required for most operations.

The IS63LV1024L-12BI is available in several different packages, including, 8-lead plastic dual-in-line, 10-lead plastic small outline and 10-lead plastic flat package. The device is available in both lead-free and non-lead-free options. The device offers an industry standard interface for applications demanding compatibility with existing systems. It is also a RoHS-compliant device, making it an ideal choice for applications that require compliance with environmental regulations.

In summary, the IS63LV1024L-12BI is a low power SRAM with numerous advantages such as its low power operation, wide variety of features, and compatibility with existing systems. The device is ideal for many applications such as automotive, security systems, and general-purpose embedded systems. It offers an excellent power-down feature and high-speed access times, making it a reliable and versatile choice for memory applications. The device is available in numerous packages and offers a RoHS-compliant design.