IS63WV1288DBLL-10HLI Allicdata Electronics
Allicdata Part #:

IS63WV1288DBLL-10HLI-ND

Manufacturer Part#:

IS63WV1288DBLL-10HLI

Price: $ 0.97
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: IS63WV1288DBLL-10HLI datasheetIS63WV1288DBLL-10HLI Datasheet/PDF
Quantity: 1000
1 +: $ 0.97000
10 +: $ 0.94090
100 +: $ 0.92150
1000 +: $ 0.90210
10000 +: $ 0.87300
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I
Description

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IS63WV1288DBLL-10HLI are dynamic random access memories (DRAM) that fall in the category of memory. This type of memory offers higher storage capacity than static random access memories (SRAM), with the downside of having volatile memory that needs to be periodically refreshed. It allows for storage of data and information, which can be quickly retrieved as needed.

IS63WV1288DBLL-10HLI are ideal for many applications due to their fast access time and low power consumption. They are commonly used in applications such as smartphones, tablets, PCs and other digital devices. DRAMs can be used as the primary form of system memory in computers and other devices, but they have been increasingly used in a variety of other applications. These include memory cards, sound synthesis, imaging and communications.

DRAMs can be connected to the processor of a computer, which in turn allows the processor to access data stored in the memory. The processor grabs data from the memory as needed. This is done by sending an address signal to the DRAM, which reads the data from that address and sends it to the processor.

The working principle of IS63WV1288DBLL-10HLI is based on capacitors that store charge. Every cell of the DRAM consists of an access transistor and a capacitor, with the transistor being responsible for controlling the writing and reading of the data stored in the capacitor. The electric charge stored in the capacitor represents the binary value of 1 or 0. To ensure that the electric charge does not dissipate, the cell must be periodically refreshed.

The IS63WV1288DBLL-10HLI is a synchronous DRAM (SDRAM) that runs at a higher speed and requires lower power than previous generations. It has a 64Mb density, with a speed of 200MHz or 266MHz. This type of DRAM provides higher speed and density than traditional DRAM, as well as improved refresh characteristics. It is commonly used in applications such as gaming, industrial automation, embedded systems, and medical and financial systems.

In conclusion, IS63WV1288DBLL-10HLI are dynamic random access memories (DRAMs) that provide higher storage capacity than static random access memories (SRAM). They allow data and information to be quickly retrieved as needed and offer fast access time and low power consumption. Due to their higher speed and density, as well as improved refresh characteristics, they are well suited for a variety of applications, such as gaming, industrial automation, embedded systems, and medical and financial systems.

The specific data is subject to PDF, and the above content is for reference

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